# Implementation of 2021 Wassenaar Arrangement Decisions > Briefs, arguments, decisions, and more. URL: https://www.frixlaw.com/law-library/documents/fr%3A2023-03683 ## Record - **Collection:** Federal Register - **Document type:** Rule - **Published:** February 24, 2023 - **Citation:** 88 FR 12108 ## Text DEPARTMENT OF COMMERCE Bureau of Industry and Security 15 CFR Parts 734, 740, 742, 772 and 774 [Docket No. 221019-0222] RIN 0694-AI72 Implementation of 2021 Wassenaar Arrangement Decisions AGENCY: Bureau of Industry and Security, Commerce. ACTION: Final rule. SUMMARY: The Bureau of Industry and Security (BIS) maintains, as part of its Export Administration Regulations (EAR), the Commerce Control List (CCL), which identifies certain items subject to Department of Commerce jurisdiction. During the December 2021 Wassenaar Arrangement on Export Controls for Conventional Arms and Dual-Use Goods and Technologies (WA) Plenary meeting, Participating States of the WA (Participating State) made certain decisions affecting the WA control lists, which BIS is now implementing via amendments to the CCL. On August 15, 2022, BIS published a final rule that implemented some of these decisions by adding to the CCL four technologies that met the criteria for emerging or foundational technologies under Section 1758 of the Export Control Reform Act of 2018 (ECRA). This final rule implements the remaining controls agreed to during the December 2021 WA Plenary meeting by revising the CCL, as well as certain EAR provisions, including License Exception Adjusted Peak Performance (APP). This final rule also makes corrections to align the scope of Significant Item (SI) license requirements throughout the EAR and makes a revision to License Exception Strategic Trade Authorization (STA). DATES: This rule is effective February 24, 2023 except for the amendments to § 740.7(d)(3)(i) and (ii) (instruction 5) and to supplement no. 1 to part 774 ECCNs 4A003, 4D001, and 4D001 (instruction 13), which are effective March 14, 2023. FOR FURTHER INFORMATION CONTACT: For general questions, contact Sharron Cook, Office of Exporter Services, Bureau of Industry and Security, U.S. Department of Commerce at 202-482-2440 or by email: Sharron.Cook@bis.doc.gov. For Technical Questions Contact Categories 0, 1 & 2: Sean Ghannadian at 202-482-3429 or Sean.Ghannadian@bis.doc.gov Category 3: Carlos Monroy at 202-482-3246 or Carlos.Monroy@bis.doc.gov Categories 4 & 5: Aaron Amundson or Anita Zinzuvadia 202-482-0707 or Aaron.Amundson@bis.doc.gov or Anita.Zinzuvadia@bis.doc.gov Categories 6: John Varesi at 202-482-1114 or John.Varesi@bis.doc.gov Categories 7: David Rosenberg at 202-482-5987, John Varesi at 202-482-1114 or David.Rosenberg@bis.doc.gov or John.Varesi@bis.doc.gov Category 9: David Rosenberg at 202-482-5987 or David.Rosenberg@bis.doc.gov “600 Series” (munitions items): Jeffrey Leitz at 202-482-7417 or Jeffrey.Leitz@bis.doc.gov SUPPLEMENTARY INFORMATION: Background The WA ( http://www.wassenaar.org/ ) is a group of 42 like-minded states committed to promoting responsibility and transparency in the global arms trade and preventing destabilizing accumulations of conventional weapons. As a Participating State of the WA, the United States has committed to controlling for export all items on the WA's List of Dual-Use Goods and Technologies (WA Dual-Use List) and on the WA Munitions List (together, WA control lists). The WA control lists were first established in 1996 and have been revised annually thereafter. Participating States have agreed to implement the changes to the WA control lists as soon as possible after agreed upon by the WA Plenary. The United States' implementation of WA control list changes ensures that U.S. companies have a level playing field with their competitors in other Participating States. BIS published an interim final rule on August 15, 2022 (87 FR 49979), implementing four new controls on items meeting the criteria of Section 1758 of ECRA, which were part of the revisions to the WA control lists decided by Participating States at the December 2021 WA Plenary meeting. The changes to the CCL and related EAR parts made by this rule reflect the remaining revisions to the WA control lists decided during the December 2021 WA Plenary meeting. The rule also makes related clarifying edits to CCL entries and revisions to reflect technical advancements. Unless explicitly discussed below, the revisions made by this rule will not impact the number of license applications submitted to BIS. Revisions to the Commerce Control List Related to WA 2021 Plenary Meeting Decisions Revises (16) ECCNs: 1A613, 1C006, 2E003, 3A001, 3A002, 4A003, 4D001, 4E001, 5A003, 6A005, 6A008, 6D003, 7D003, 9A004, 9B001, and 9E003. Removed (1) ECCN: 0A988. 0A988 Conventional Military Steel Helmets In a rule issued on January 2, 2014 (79 FR 264), effective July 1, 2014, BIS moved conventional steel helmets from ECCN 0A988 to newly added ECCN 1A613.y.1. ECCN 0A988 remained on the CCL but contained only a brief explanation that the control for these helmets had been moved to 1A613.y.1. Given the time that has elapsed since relocation of the control for these helmets, the explanation under paragraph 0A988, along with the entry itself, are no longer necessary. BIS is therefore removing ECCN 0A988 from the CCL. 1A613 Armored and Protective “Equipment” and Related Commodities This rule revises 1A613.c “military helmets” by removing the phrase “and “specially designed” helmet shells, liners, or comfort pads therefor.”, because it is duplicative of items that are already controlled under 1A613.x, specifically, any specially designed parts, components, or accessories would be controlled under 1A613.x, including the shells, liners, and pads currently specified in 1A613.c. In paragraph 1A613.c, this rule adds Note 3, which lists characteristics of items that are not controlled by 1A613.c, e.g., first manufactured before 1970. The same language is added as a note to 1A613.y.1. The note below 1A613.x, which addresses examples of items controlled by this ECCN, is revised to improve readability. 1C006 Fluids and Lubricating Materials This rule revises 1C006.b by removing paragraph b.2 (Fluorinated silicone fluids), because extensive market research submitted to the WA indicates that in the past two decades countries that are not Participating States have either developed or obtained the expertise to produce fluorinated silicone fluids. Due to the availability of this item in countries that are not Participating States, the Participating States decided to remove it from their control lists. BIS is accordingly removing the item from the CCL. Items previously controlled under 1C006.b.2 are now EAR99 and remain subject to the EAR. Annex to Category 1—List of Explosives (See ECCNs 1A004 and 1A008) This rule revises the Annex to Category 1 of the CCL by adding two explosives under two entries, numbers 51 and 52, to the List of Explosives: EDNA (Ethylenedinitramine) (CAS 505-71-5); and TKX-50 (Dihydroxylammonium 5,5′-bistetrazole-1,1′-diolate). These two explosives were added in 2017 and 2018, respectively, to the WA Munitions List (ML 8.a.), and were added for consistency's sake to the List of Explosives set forth in the Annex of Category 1 of the WA Munitions List as part of the December 2021 WA Plenary. TKX-50 (Dihydroxylammonium 5,5′-bistetrazole-1,1′-diolate) is a high energetic material that outperforms numerous common explosives widely used today. For this reason, it was added to the WA Munitions List in 2018. EDNA is a legacy explosive standardized as a military explosive during World War II. EDNA has been studied in several countries but due to its lower energetic properties, it is not yet in full-scale use. Nevertheless, because EDNA has great potential for gun propellants applications, it was added to the WA Munitions List in 2017. 2E003 Other “Technology” This rule removes 2E003.b.2 (Technical data consisting of process methods) from the CCL. The control on the parameters described in 2E003.b.2 has remained unchanged since the establishment of the WA Dual-Use List in 1996. Since that date, each of the four processes described in 2E003.b.2.a-d. have entered common commercial use, e.g., golf clubs and automobile manufacturing. Therefore, there is no longer a reason to control the technical data specified in 2E003.b.2. on the CCL. This rule also deletes a note in the CCL related to one of the technologies in 2E003.b.2 and adds a nota bene (N.B.) regarding gas turbine engines. Category 3—Electronics Notes This rule revises Note 1 to Category 3 by adding 3A001.b.12 to the list of 3A001 subparagraphs that are not within the scope of the note, i.e., if a 3A001.b.12 item is specially designed for or has the same functional characteristics as other equipment, then it remains classified as 3A001.b.12. 3A001 Electronic Items & 3A002 General Purpose “Electronic Assemblies,” Modules and Equipment This rule amends paragraph 3A001.b.4.b.1 by correcting the specified power output in decibel-milliwatts (dBm) from 48.54 dBm to 48.45 dBm. It also makes two additional technical corrections by adding “a” in 3A002.c.2 before “Displayed Average Noise Level” and in 3A002.d.4 before “single sideband”. This rule revises paragraphs 3A001.b.11.e (`frequency synthesizer' “electronic assemblies”), 3A002.d.3.e (signal generators with specified “frequency switching times”), and 3A002.d.5.c (signal generators with specified `RF modulation bandwidth' of digital baseband signals) by decreasing the upper limit of the specified frequency range from 90 gigahertz (GHz) to 75 GHz. The upper limit of 75 GHz now applies to 3A001.b.11.e, 3A002.d.3.e, and 3A002.d.5.c, which have a “frequency switching time” of “less than 100 μs for any frequency change exceeding 2.2 GHz.” The Participating States decided to expand certain frequency ranges to account for higher signal generator Radio Frequency (RF) modulation bandwidth at millimeter-wave frequencies, specifically within the 60 to 90 GHz band (E-band), required for automotive anti-collision radar. Specifically, the 76 to 81 GHz frequency band has been allocated for automotive radar in the United States and Europe. Moreover, electronic assemblies and signal generator requirements for automotive radar millimeter-wave applications will require RF modulated outputs over a bandwidth larger than the former control limit of 2.2 GHz RF modulation bandwidth. Accordingly, 3A001.b.11.f is added as a new paragraph to control `frequency synthesizer' “electronic assemblies” having a “frequency switching time” of “less than 100 µs for any frequency change exceeding 5.0 GHz within the synthesized frequency range exceeding 75 GHz but not exceeding 90 GHz.” This rule also adds paragraph 3A002.d.3.g to control signal generators having a “frequency switching time” of “Less than 100 µs for any frequency change exceeding 5.0 GHz within the frequency range exceeding 75 GHz but not exceeding 90 GHz;” and adds paragraph 3A002.d.5.d to control signal generators with a `RF modulation bandwidth' of digital baseband signals “Exceeding 5.0 GHz within the frequency range exceeding 75 GHz but not exceeding 90 GHz.” 4A003 “Digital Computers” Prior to the publication of this rule, 4A003.b specified an APP threshold of 29 Weighted TeraFLOPS (WT) for “digital computers”. However, for those Participating States that manufacture digital computer systems, including 32-socket servers that have approached this 29 WT threshold, such digital computer systems would likely exceed this APP threshold if built with the latest generation microprocessor in 2022 or in the near future. Additionally, there is an increased demand for database servers across a broad range of industries including business planning, banking/financial transactions, healthcare, genetic research, and fraud detection. To reflect these circumstances, the Participating States decided to raise the control threshold from 29 WT to 70 WT. The Participating States determined that this increase in control threshold would provide sufficient margin for a few years' growth before another adjustment would be necessary. Accordingly, this rule raises the APP threshold for “digital computers” in 4A003.b from “exceeding 29 Weighted TeraFLOPS (WT)” to “exceeding 70 Weighted TeraFLOPS (WT).” Consistent with this change, the Antiterrorism (AT) license requirement paragraph in the License Requirements section of 4A003 and the Note that follows the license requirement table are also amended by changing the specified APP threshold from 29 to 70 WT. The Congressional notification requirement set forth in subsection 1211(d) of the National Defense Authorization Act for Fiscal Year 1998 (Pub. L. 105-85, November 18, 1997, 111 Stat. 1629, 1932-1933, as amended; 50 U.S.C. 4604 note) provides that the President must submit a report to Congress 60 days before adjusting the composite theoretical performance level above which exports of digital computers to Tier 3 countries require a license. The submission of this report has been delegated to the Secretary of Commerce. On January 13, 2023, the Secretary of Commerce submitted to Congress a report that establishes and provides justification for the 70 WT control level using the APP formula. Therefore, this revision will become effective on March 14, 2023. BIS estimates that this revision will result in no change to license application submissions, because this revision is keeping pace with advancements in HPC technology. This rule makes a correction by removing 4A003.e from the national security license requirements, because there currently is no paragraph 4A003.e. 4D001 “Software” & 4E001 “Technology” In light of the change made to the APP threshold in 4A003.b, this rule makes conforming changes to the APP threshold in the License Exception Technology and Software under Restriction (TSR) eligibility paragraph and to the Special Conditions for STA paragraph under ECCNs 4D001 and 4E001 that raise the specified APP threshold from 29 WT to 70 WT. These revisions will become effective on March 14, 2023. § 740.7 License Exception Adjusted Peak Performance (APP) This rule amends License Exception APP to raise the APP eligibility levels for deemed exports of “technology” and “software” source code destined to foreign nationals of Computer Tiers 1 and 3 Countries. These levels, which are recommended by industry groups in consultation with BIS, are raised to better enable the advancement of “development,” “production,” and “use” “technology” and “software” in the area of computer manufacturing, which in turn promotes advancements in military technology that bolster the national security of the United States. Computer Tier 1 Revisions This rule amends § 740.7(c)(3)(ii) by raising the APP from 40 WT to 175 WT for eligible deemed exports of “development” and “production” technology and source code to foreign nationals of Tier 1 countries. It also amends § 740.7(c)(3)(iii) by raising the APP from 200 WT to 500 WT for eligible deemed exports of “use” technology and source code to foreign nationals of Computer Tier 1 countries. Computer Tier 3 Revisions This rule amends § 740.7(d)(3)(i) by raising the APP from 16 WT to 50 WT for eligible deemed exports of “development” and “production” technology and source code to foreign nationals of Tier 3 countries. It also amends § 740.7(d)(3)(ii) by raising the APP from 32 WT to 140 WT for eligible deemed exports of “use” technology and source code to foreign nationals of Computer Tier 3 countries which becomes effective March 14, 2023. License Exception Strategic Trade Authorization Revision This rule adds new paragraph (b)(2)(viii)(A) to § 740.20 License Exception Strategic Trade Authorization (STA) to harmonize this license exception with the STA special condition under ECCN 9B001 that states that STA may not be used for a Country Group A:6 destination. Consistent with this addition, this rule redesignates existing subparagraphs (A)-(F) as (B)-(G). This revision to STA aligns with BIS's goal to clarify restrictions on the availability of STA for the export, reexport, and transfer (in-country) of certain items controlled under the EAR as set forth in the preamble of a proposed rule published on October 22, 2021 (86 FR 58615). This revision is also generally responsive to a public comment received in response to that rule that is supportive of BIS's efforts to clarify restrictions on STA's availability. BIS is reviewing other public comments that it received in response to that rule and will address them in a separate final rule at a future date. As set forth below, this rule also makes certain revisions to ECCN 9B001. 5A003 “Systems,” “Equipment” and “Components,” for Non-Cryptographic “Information Security” This rule revises 5A003.a to replace the word “using” with the words “to use,” to clarify that the scope of controls applies to communication cable systems that were designed or modified to employ either mechanical, electrical or electronic means to detect surreptitious intrusion, not communication cable systems that were designed or modified by utilizing mechanical, electrical or electronic means. 6A005 “Lasers”, “Components” and Optical Equipment 6A005.d.1.b.1 applies to individual `multiple-transverse mode' semiconductor “lasers” with an average or continuous wave (CW) output power exceeding 15 watts (W). This is a relatively low output power value. Multiple-transverse mode semiconductor lasers can achieve much higher powers and are now readily available outside of Participating States in an increasing number of commercial applications. For this reason, this rule revises 6A005.d.1.b.1 by increasing the average or CW output power from 15 W to 25 W for individual `multiple-transverse mode' semiconductor “lasers.” 6A008 Radar Systems, Equipment and Assemblies This rule revises Technical Note 1, which appears after the Note to 6A008.l, by replacing the word “used” with the word “designed” to clarify that the scope of the note applies to marine radars that are designed for civil application rather than to marine radars used for civil application. 6D003 Other “Software” This rule revises 6D003.h.1, which refers to certain Air Traffic Control “software application programs”, by deleting the words “application programs,” which are superfluous in this context. The word “software” sufficiently describes the scope of controlled under 6D003.h.1. 7D003 Other “Software” This rule makes an editorial revision to 7D003.e by adding a hyphen between the words “circulation” and “controlled” that appears after the word helicopter; as revised, the reference is to “helicopter circulation-controlled anti-torque or circulation-controlled direction control systems,” which is a defined term in § 772.1 of the EAR. 9A004 Space Launch Vehicles and “Spacecraft,” “Spacecraft Buses”, “Spacecraft Payloads”, “Spacecraft” On-Board Systems or Equipment, Terrestrial Equipment, and Air-Launch Platforms This rule adds “sub-orbital craft” to the heading of ECCN 9A004 and to paragraph 9A004.g. Based on this addition, 9A004.g now controls “aircraft” “specially designed” or modified to be air-launch platforms for “sub-orbital craft.” This change is being made to reflect the fact that “aircraft” “specially designed” or modified to be air-launch platforms for sub-orbital craft may be indistinguishable from “aircraft” “specially designed” or modified to be air-launch platforms for space launch vehicles. 9B001 Manufacturing Equipment, Tooling or Fixtures This rule revises 9B001.c by broadening the control in two respects. First, it replaces “specially designed” with “designed”, and second, it replaces the phrase “manufacturing gas turbine engine blades, vanes or “tip shrouds” ” with “superalloys”, a broader term referring to certain highly durable materials. As revised, the text mirrors the control in 9B001.a, which covers directional solidification or single crystal casting equipment designed for “superalloys.” In particular, the revised control focuses on additive-manufacturing equipment designed to work with a certain type of material (“superalloys”), rather than on the three manufactured items (“manufacturing gas turbine engine blades, vanes or “tip shrouds” ”). These changes are necessary to keep pace with technology advancements and modernize controls to address new methods to manufacture gas turbine engine components ( e.g., blades, vanes, “tip shrouds”) using refractory metals. 9E003 Other “technology” This rule revises the STA special conditions paragraph for ECCN 9E003 by removing paragraph a.8, and adding paragraphs .c and. i (other than technology for fan or power turbines) to match the STA limitation paragraph in § 740.20(b)(2)(viii)(D)(1) of the EAR. This revision is consistent with BIS's goal, as stated in the preamble of the October 22, 2021 rule (86 FR 58615), to clarify restrictions on the availability of STA for the export, reexport, and transfer (in-country) of certain items controlled under the EAR. This rule also makes an editorial revision to 9E003.a.5 by removing a hyphen; as revised, the control applies to “tip shrouds.” Significant Items: Hot Section Technology A hot section refers to the portion of a gas turbine engine that operates at a high temperature, i.e., the combustion, turbine, and exhaust sections. This rule makes a correction to the list of items included as Significant Items (SI) in §§ 734.4(a)(4)'s de minimis rules and in 742.14(a) and (b). The list included 9E003.j wing-folding systems, which is not hot section technology, but did not include 9E003.k, “ “Technology” not otherwise controlled in 9E003.a.1 through a.8, a.10, and .h and used in the “development”, “production”, or overhaul of hot section “parts” or “components” of civil derivatives of military engines controlled on the USML.” This revision will align these corrected sections of the EAR with the SI license requirements in 9E003. Part 772—Definitions of Terms This rule amends § 772.1 by revising the definitions of the terms “compensation systems” and “diffusion bonding.” The definition of “compensation systems” is clarified by adding the word “the” in the phrase “that permit reduction of [the] rigid body rotation noise of the platform.” The definition of the term “diffusion bonding” is amended by removing the reference to Category 9 in the parenthetical that lists where this term is used in the CCL, because it is not used in Category 9. Savings Clause Shipments of items removed from license exception eligibility or eligibility for export, reexport or transfer (in-country) without a license as a result of this regulatory action that were on dock for loading, on lighter, laden aboard an exporting carrier, or en route aboard a carrier to a port of export, on February 24, 2023, pursuant to actual orders for exports, reexports and transfers (in-country) to a foreign destination, may proceed to that destination under the previous license exception eligibility or without a license so long as they have been exported, reexported or transferred (in-country) before April 18, 2023. Any such items not actually exported, reexported or transferred (in-country) before midnight, on April 18, 2023, require a license in accordance with this final rule. Export Control Reform Act of 2018 On August 13, 2018, the President signed into law the John S. McCain National Defense Authorization Act for Fiscal Year 2019, which included the ECRA, 50 U.S.C. 4801-4852. ECRA provides the legal basis for BIS's principal authorities and serves as the authority under which BIS issues this rule. Rulemaking Requirements 1. Executive Orders 13563 and 12866 direct agencies to assess all costs and benefits of available regulatory alternatives and, if regulation is necessary, to select regulatory approaches that maximize net benefits (including potential economic, environmental, public health and safety effects and distributive impacts and equity). Executive Order 13563 emphasizes the importance of quantifying both costs and benefits and of reducing costs, harmonizing rules, and promoting flexibility. This final rule has been designated a “significant regulatory action” under section 3(f) of Executive Order 12866. This rule does not contain policies with Federalism implications as that term is defined under Executive Order 13132. 2. Notwithstanding any other provision of law, no person is required to respond to, nor shall any person be subject to a penalty for failure to comply with, a collection of information subject to the requirements of the Paperwork Reduction Act of 1995 (44 U.S.C. 3501 et seq. ) (PRA), unless that collection of information displays a currently valid Office of Management and Budget (OMB) Control Number. Although this rule makes important changes to the EAR for items controlled for national security reasons, BIS believes that the overall increases in burdens and costs associated with the following information collections due to this rule will be minimal. • 0694-0088, “Simplified Network Application Processing System,” which carries a burden- hour estimate of 29.6 minutes for a manual or electronic submission; • 0694-0137, “License Exceptions and Exclusions,” which carries a burden-hour estimate average of 1.5 hours per submission (Note: submissions for License Exceptions are rarely required); • 0694-0096, “Five Year Records Retention Period,” which carries a burden-hour estimate of less than 1 minute; and • 0607-0152, “Automated Export System (AES) Program,” which carries a burden-hour estimate of 3 minutes per electronic submission. Additional information regarding these collections of information—including all background materials—can be found at https://www.reginfo.gov/public/do/PRAMain and using the search function to enter either the title of the collection or the OMB Control Number. 3. Pursuant to Section 1762 of ECRA (50 U.S.C. 4821), this action is exempt from the Administrative Procedure Act (APA) (5 U.S.C. 553) requirements for notice of proposed rulemaking, opportunity for public participation and delay in effective date. List of Subjects 15 CFR Part 734 Administrative practice and procedure, Exports, Inventions and patents, Research, Science and technology. 15 CFR Part 740 Administrative practice and procedure, Exports, Reporting and recordkeeping requirements. 15 CFR Part 742 Exports, Terrorism. 15 CFR Part 772 Exports. 15 CFR Part 774 Exports, Reporting and recordkeeping requirements, Terrorism. Accordingly, parts 734, 740, 742, 772 and 774 of the Export Administration Regulations (15 CFR parts 730-774) are amended as follows: PART 734—SCOPE OF THE EXPORT ADMINISTRATION REGULATIONS 1. The authority citation for part 734 continues to read as follows: Authority: 50 U.S.C. 4801-4852; 50 U.S.C. 4601 et seq.; 50 U.S.C. 1701 et seq.; E.O. 12938, 59 FR 59099, 3 CFR, 1994 Comp., p. 950; E.O. 13020, 61 FR 54079, 3 CFR, 1996 Comp., p. 219; E.O. 13026, 61 FR 58767, 3 CFR, 1996 Comp., p. 228; E.O. 13222, 66 FR 44025, 3 CFR, 2001 Comp., p. 783; E.O. 13637, 78 FR 16129, 3 CFR, 2014 Comp., p. 223; Notice of November 10, 2021, 86 FR 62891 (November 12, 2021). 2. Effective February 24, 2023, amend § 734.4 by revising paragraph (a)(4) to read as follows: § 734.4 De minimis U.S. content. (a) * * * (4) There is no de minimis level for U.S.-origin technology controlled by ECCN 9E003.a.1 through a.8, h, .i, and .k, when redrawn, used, consulted, or otherwise commingled abroad. PART 740—LICENSE EXCEPTIONS 3. The authority citation for part 740 continues to read as follows: Authority: 50 U.S.C. 4801-4852; 50 U.S.C. 4601 et seq.; 50 U.S.C. 1701 et seq.; 22 U.S.C. 7201 et seq.; E.O. 13026, 61 FR 58767, 3 CFR, 1996 Comp., p. 228; E.O. 13222, 66 FR 44025, 3 CFR, 2001 Comp., p. 783. 4. Effective February 24, 2023, amend § 740.7 by revising paragraphs (c)(3)(ii) and (iii) to read as follows: § 740.7 COMPUTERS (APP). (c) * * * (3) * * * (ii) “Development” and “production” technology and source code described in paragraph (a)(2) of this section for computers with a APP less than or equal to 175 Weighted TeraFLOPS (WT) are eligible for deemed exports under License Exception APP to foreign nationals of Tier 1 destinations, other than the destinations that are listed in paragraph (c)(3)(i) of this section, subject to the restrictions in paragraph (b) of this section. (iii) “Use” technology and source code described in paragraph (a)(2) of this section for computers with a APP less than or equal to 500 WT are eligible for deemed exports under License Exception APP to foreign nationals of Tier 1 destinations, other than the destinations that are listed in paragraph (c)(3)(i) of this section, subject to the restrictions in paragraph (b) of this section. 5. Effective March 14, 2023, § 740.7 is amended by revising paragraphs (d)(3)(i) and (ii) to read as follows: § 740.7 Computers (APP). (d) * * * (3) * * * (i) “Development” and “production” technology and source code described in paragraph (a)(2) of this section for computers with an APP less than or equal to 50 Weighted TeraFLOPs (WT) are eligible for deemed exports under License Exception APP to foreign nationals of Tier 3 destinations as described in paragraph (d)(1) of this section, subject to the restrictions in paragraph (b) of this section. (ii) “Use” technology and source code described in paragraph (a)(2) of this section for computers with an APP less than or equal to 140 WT are eligible for deemed exports under License Exception APP to foreign nationals of Tier 3 destinations as described in paragraph (d)(1) of this section, subject to the restrictions in paragraph (b) of this section. 6. Effective February 24, 2023, amend § 740.20 by redesignating paragraphs (b)(2)(viii)(A) through (F) as paragraphs (b)(2)(viii)(B) through (G) and adding new paragraph (b)(2)(viii)(A) to read as follows: § 740.20 License Exception Strategic Trade Authorization (STA). (b) * * * (2) * * * (viii) * * * (A) License Exception STA may not be used for 9B001 when destined to a country in Country Group A:6. PART 742—CONTROL POLICY—CCL BASED CONTROLS 7. The authority citation for part 742 continues to read as follows: Authority: 50 U.S.C. 4801-4852; 50 U.S.C. 4601 et seq.; 50 U.S.C. 1701 et seq.; 22 U.S.C. 3201 et seq.; 42 U.S.C. 2139a; 22 U.S.C. 7201 et seq.; 22 U.S.C. 7210; Sec. 1503, Pub. L. 108-11, 117 Stat. 559; E.O. 12058, 43 FR 20947, 3 CFR, 1978 Comp., p. 179; E.O. 12851, 58 FR 33181, 3 CFR, 1993 Comp., p. 608; E.O. 12938, 59 FR 59099, 3 CFR, 1994 Comp., p. 950; E.O. 13026, 61 FR 58767, 3 CFR, 1996 Comp., p. 228; E.O. 13222, 66 FR 44025, 3 CFR, 2001 Comp., p. 783; Presidential Determination 2003-23, 68 FR 26459, 3 CFR, 2004 Comp., p. 320; Notice of November 10, 2021, 86 FR 62891 (November 12, 2021). 8. Effective February 24, 2023, amend § 742.14 by revising paragraph (a) and paragraph (b) introductory text to read as follows: § 742.14 Significant items: hot section technology for the development, production or overhaul of commercial aircraft engines, components, and systems. (a) License requirement. Licenses are required for all destinations, except Canada, for ECCNs having an “SI” under the “Reason for Control” paragraph. These items include hot section technology for the development, production or overhaul of commercial aircraft engines controlled under ECCN 9E003.a.1 through a.8, .h, .i and .k, and related controls. (b) Licensing policy. Pursuant to section 6 of the Export Administration Act of 1979, as amended, foreign policy controls apply to technology required for the development, production or overhaul of commercial aircraft engines controlled by ECCN 9E003a.1 through a.8, .h, .i, and .k, and related controls. These controls supplement the national security controls that apply to these items. Applications for export and reexport to all destinations will be reviewed on a case-by-case basis to determine whether the export or reexport is consistent with U.S. national security and foreign policy interests. The following factors are among those that will be considered to determine what action will be taken on license applications: PART 772—DEFINITIONS OF TERMS 9. The authority citation for part 772 continues to read as follows: Authority: 50 U.S.C. 4801-4852; 50 U.S.C. 4601 et seq.; 50 U.S.C. 1701 et seq.; E.O. 13222, 66 FR 44025, 3 CFR, 2001 Comp., p. 783. 10. Effective February 24, 2023, amend § 772.1 by revising the definitions of “compensation systems” and “diffusion bonding,” to read as follows: § 772.1 Definitions of terms as used in the Export Administration Regulations (EAR). Compensation systems. (Cat 6) Consist of the primary scalar sensor, one or more reference sensors ( e.g., vector “magnetometers”) together with software that permit reduction of the rigid body rotation noise of the platform. Diffusion bonding. (Cat 1 and 2)—A solid state joining of at least two separate pieces of metals into a single piece with a joint strength equivalent to that of the weakest material, wherein the principal mechanism is interdiffusion of atoms across the interface. PART 774—THE COMMERCE CONTROL LIST 11. The authority citation for part 774 continues to read as follows: Authority: 50 U.S.C. 4801-4852; 50 U.S.C. 4601 et seq.; 50 U.S.C. 1701 et seq.; 10 U.S.C. 8720; 10 U.S.C. 8730(e); 22 U.S.C. 287c, 22 U.S.C. 3201 et seq.; 22 U.S.C. 6004; 42 U.S.C. 2139a; 15 U.S.C. 1824; 50 U.S.C. 4305; 22 U.S.C. 7201 et seq.; 22 U.S.C. 7210; E.O. 13026, 61 FR 58767, 3 CFR, 1996 Comp., p. 228; E.O. 13222, 66 FR 44025, 3 CFR, 2001 Comp., p. 783. 12. Effective February 24, 2023, amend supplement no. 1 to part 774 by: a. Under Category 0 removing ECCN 0A988; b. Under Category 1 revising ECCNs 1A613, 1C006, and Annex to Category 1; c. Under Category 2 revising ECCN 2E003; d. Under Category 3 revising Note 1, and ECCNs 3A001 and 3A002; e. Under Category 5PT2 revising ECCN 5A003; f. Under Category 6 revising ECCNs 6A005, 6A008, and 6D003; g. Under Category 7 revising ECCN 7D003; and h. Under Category 9, revising ECCNs 9A004, 9B001, and 9E003. The revisions read as follows: Supplement No. 1 to Part 774—The Commerce Control List Category 1—Special Materials and Related Equipment, Chemicals, “Microorganisms,” and “Toxins” 1A613 Armored and protective “equipment” and related commodities, as follows (see List of Items Controlled). License Requirements Reason for Control: NS, RS, AT, UN Control(s) Country chart (see Supp. No. 1 to part 738) NS applies to entire entry except 1A613.y NS Column 1. RS applies to entire entry except 1A613.y RS Column 1. RS applies 1A613.y China, Russia, or Venezuela (see § 742.6(a)(7)). AT applies to entire entry AT Column 1. UN applies to entire entry, except 1A613.y See § 746.1(b) for UN controls. List Based License Exceptions (See Part 740 for a Description of All License Exceptions) LVS: $1500 GBS: N/A Special Conditions for STA STA: Paragraph (c)(2) of License Exception STA (§ 740.20(c)(2) of the EAR) may not be used for any item in 1A613. List of Items Controlled Related Controls: (1) Defense articles, such as materials made from classified information, that are controlled by USML Category X or XIII of the ITAR, and technical data (including software) directly related thereto, are “subject to the ITAR.” (2) See ECCN 0A919 for foreign-made “military commodities” that incorporate more than a de minimis amount of US-origin “600 series” controlled content. (3) See ECCN 9A610.g for anti-gravity suits (“G-suits”) and pressure suits capable of operating at altitudes higher than 55,000 feet above sea level. (4) For other military helmet “components” or “accessories” not specified in 1A613.c, see the relevant ECCN in the CCL or USML Entry. Related Definitions: References to “NIJ Type” protection are to the National Institute of Justice Classification guide at NIJ Standard 0101.06, Ballistic Resistance of Body Armor, and NIJ Standard 0108.01, Ballistic Resistant Protective Materials. Items: a. Metallic or non-metallic armored plate “specially designed” for military use and not controlled by the USML. Note to paragraph a: For controls on body armor plates, see ECCN 1A613.d.2 and USML Category X(a)(1). b. Shelters “specially designed” to: b.1. Provide ballistic protection for military systems; or b.2. Protect against nuclear, biological, or chemical contamination. c. Military helmets (other than helmets controlled under 1A613.y.1) providing less than NIJ Type IV or “equivalent standards” protection. Note 1: See ECCN 0A979 for controls on police helmets. Note 2: See USML Category X(a)(5) and (a)(6) for controls on other military helmets. Note 3: 1A613.c does not apply to helmets that meet all the following: a. Were first manufactured before 1970; and b. Are neither designed or modified to accept, nor equipped with items specified by the U.S. Munitions List (22 CFR 121) or another “600 series” ECCN. d. Body armor and protective garments, as follows: d.1. Soft body armor and protective garments manufactured to military standards or specifications, or to their equivalents, that provide ballistic protection equal to or less than NIJ level III (NIJ 0101.06, July 2008) or “equivalent standards”; or Note: For 1A613.d.1, military standards or specifications include, at a minimum, specifications for fragmentation protection. d.2. Hard body armor plates that provide ballistic protection equal to NIJ level III (NIJ 0101.06, July 2008) or “equivalent standards”. Note: See ECCN 1A005 for controls on soft body armor not manufactured to military standards or specifications and hard body armor plates providing less than NIJ level III or “equivalent standards” protection. For body armor providing NIJ Type IV protection or greater, see USML Category X(a)(1). e. Atmospheric diving suits “specially designed” for rescue operations for submarines controlled by the USML or the CCL. f. Other personal protective “equipment” “specially designed” for military applications not controlled by the USML, not elsewhere controlled on the CCL. g. to w. [Reserved] x. “Parts,” “components,” “accessories,” and “attachments” that are “specially designed” for a commodity controlled by ECCN 1A613 (except for 1A613.y) or an article enumerated in USML Category X, and not controlled elsewhere in the USML. Note: 1A613.x includes forgings, castings, and other unfinished products, such as extrusions and machined bodies, that have reached a stage in manufacturing where they are clearly identifiable by mechanical properties, material composition, geometry, or function as commodities specified in ECCN 1A613.x. y. Other commodities as follows: y.1 Conventional military steel helmets. Note: 1A613.y.1 does not apply to helmets that meet all the following: a. Were first manufactured before 1970; and b. Are neither designed or modified to accept, nor equipped with items specified by the U.S. Munitions List (22 CFR 121) or another “600 series” ECCN. N.B. to paragraph y.1: For other military helmet “components” or “accessories,” see the relevant ECCN in the CCL or USML Entry. y.2 [Reserved] 1C006 Fluids and lubricating materials, as follows (see List of Items Controlled). License Requirements Reason for Control: NS, AT Control(s) Country chart (see Supp. No. 1 to part 738) NS applies to entire entry NS Column 2. AT applies to entire entry AT Column 1. List Based License Exceptions (See Part 740 for a Description of All License Exceptions) LVS: $3000 GBS: Yes for 1C006.d List of Items Controlled Related Controls: See also 1C996. Related Definitions: N/A Items: a. [Reserved] b. Lubricating materials containing, as their principal ingredients, phenylene or alkylphenylene ethers or thio-ethers, or their mixtures, containing more than two ether or thio-ether functions or mixtures thereof. c. Damping or flotation fluids having all of the following: c.1. Purity exceeding 99.8%; c.2. Containing less than 25 particles of 200 μm or larger in size per 100 ml; and c.3. Made from at least 85% of any of the following: c.3.a. Dibromotetrafluoroethane (CAS 25497-30-7, 124-73-2, 27336-23-8); c.3.b. Polychlorotrifluoroethylene (oily and waxy modifications only); or c.3.c. Polybromotrifluoroethylene; d. Fluorocarbon fluids designed for electronic cooling and having all of the following: d.1. Containing 85% by weight or more of any of the following, or mixtures thereof: d.1.a. Monomeric forms of perfluoropolyalkylether-triazines or perfluoroaliphatic-ethers; d.1.b. Perfluoroalkylamines; d.1.c. Perfluorocycloalkanes; or d.1.d. Perfluoroalkanes; d.2. Density at 298 K (25 °C) of 1.5 g/ml or more; d.3. In a liquid state at 273 K (0 °C); and d.4. Containing 60% or more by weight of fluorine. Note: 1C006.d does not apply to materials specified and packaged as medical products. Annex to Category 1 List of Explosives (See ECCNs 1A004 and 1A008) 1. ADNBF (aminodinitrobenzofuroxan or 7 amino 4,6 dinitrobenzofurazane 1 oxide) (CAS 97096 78 1); 2. BNCP (cis bis (5 nitrotetrazolato) tetra amine cobalt (III) perchlorate) (CAS 117412 28 9); 3. CL 14 (diamino dinitrobenzofuroxan or 5,7 diamino 4,6 dinitrobenzofurazane 1 oxide) (CAS 117907 74 1); 4. CL 20 (HNIW or Hexanitrohexaazaisowurtzitane) (CAS 135285 90 4); chlathrates of CL 20; 5. CP (2 (5 cyanotetrazolato) penta amine cobalt (III) perchlorate) (CAS 70247 32 4); 6. DADE (1,1 diamino 2,2 dinitroethylene, FOX-7) (CAS 145250-81-3); 7. DATB (diaminotrinitrobenzene) (CAS 1630 08 6); 8. DDFP (1,4 dinitrodifurazanopiperazine); 9. DDPO (2,6 diamino 3,5 dinitropyrazine 1 oxide, PZO) (CAS 194486 77 6); 10. DIPAM (3,3′ diamino 2,2′,4,4′,6,6′ hexanitrobiphenyl or dipicramide) (CAS 17215 44 0); 11. DNGU (DINGU or dinitroglycoluril) (CAS 55510 04 8); 12. Furazans as follows: a. DAAOF (diaminoazoxyfurazan); b. DAAzF (diaminoazofurazan) (CAS 78644 90 3); 13. HMX and derivatives, as follows: a. HMX (Cyclotetramethylenetetranitramine, octahydro 1,3,5,7 tetranitro 1,3,5,7 tetrazine, 1,3,5,7 tetranitro 1,3,5,7 tetraza cyclooctane, octogen or octogene) (CAS 2691 41 0); b. Difluoroaminated analogs of HMX; c. K 55 (2,4,6,8 tetranitro 2,4,6,8 tetraazabicyclo [3,3,0] octanone 3, tetranitrosemiglycouril or keto bicyclic HMX) (CAS 130256 72 3); 14. HNAD (hexanitroadamantane) (CAS 143850 71 9); 15. HNS (hexanitrostilbene) (CAS 20062 22 0); 16. Imidazoles as follows: a. BNNII (Octahydro 2,5 bis(nitroimino)imidazo [4,5 d]imidazole); b. DNI (2,4 dinitroimidazole) (CAS 5213 49 0); c. FDIA (1 fluoro 2,4 dinitroimidazole); d. NTDNIA (N (2 nitrotriazolo) 2,4 dinitroimidazole); e. PTIA (1 picryl 2,4,5 trinitroimidazole); 17. NTNMH (1 (2 nitrotriazolo) 2 dinitromethylene hydrazine); 18. NTO (ONTA or 3 nitro 1,2,4 triazol 5 one) (CAS 932 64 9); 19. Polynitrocubanes with more than four nitro groups; 20. PYX (2,6 Bis(picrylamino) 3,5 dinitropyridine) (CAS 38082 89 2); 21. RDX and derivatives, as follows: a. RDX (cyclotrimethylenetrinitramine, cyclonite, T4, hexahydro 1,3,5 trinitro 1,3,5 triazine, 1,3,5 trinitro 1,3,5 triaza cyclohexane, hexogen or hexogene) (CAS 121 82 4); b. Keto RDX (K 6 or 2,4,6 trinitro 2,4,6 triazacyclohexanone) (CAS 115029 35 1); 22. TAGN (triaminoguanidinenitrate) (CAS 4000 16 2); 23. TATB (triaminotrinitrobenzene) (CAS 3058 38 6); 24. TEDDZ (3,3,7,7 tetrabis(difluoroamine) octahydro 1,5 dinitro 1,5 diazocine); 25. Tetrazoles as follows: a. NTAT (nitrotriazol aminotetrazole); b. NTNT (1 N (2 nitrotriazolo) 4 nitrotetrazole); 26. Tetryl (trinitrophenylmethylnitramine) (CAS 479 45 8); 27. TNAD (1,4,5,8 tetranitro 1,4,5,8 tetraazadecalin) (CAS 135877 16 6); 28. TNAZ (1,3,3 trinitroazetidine) (CAS 97645 24 4); 29. TNGU (SORGUYL or tetranitroglycoluril) (CAS 55510 03 7); 30. TNP (1,4,5,8 tetranitro pyridazino[4,5 d]pyridazine) (CAS 229176 04 9); 31. Triazines as follows: a. DNAM (2 oxy 4,6 dinitroamino s triazine) (CAS 19899 80 0); b. NNHT (2 nitroimino 5 nitro hexahydro 1,3,5 triazine) (CAS 130400 13 4); 32. Triazoles as follows: a. 5 azido 2 nitrotriazole; b. ADHTDN (4 amino 3,5 dihydrazino 1,2,4 triazole dinitramide) (CAS 1614 08 0); c. ADNT (1 amino 3,5 dinitro 1,2,4 triazole); d. BDNTA ((bis dinitrotriazole)amine); e. DBT (3,3′ dinitro 5,5 bi 1,2,4 triazole) (CAS 30003 46 4); f. DNBT (dinitrobistriazole) (CAS 70890 46 9); g. [Reserved] h. NTDNT (1 N (2 nitrotriazolo) 3,5 dinitrotriazole); i. PDNT (1 picryl 3,5 dinitrotriazole); j. TACOT (tetranitrobenzotriazolobenzotriazole) (CAS 25243 36 1); 33. “Explosives” not listed elsewhere in this list having a detonation velocity exceeding 8,700 m/s, at maximum density, or a detonation pressure exceeding 34 GPa (340 kbar); 34. [Reserved] 35. Nitrocellulose (containing more than 12.5% nitrogen) (CAS 9004-70-0); 36. Nitroglycol (CAS 628-96-6); 37. Pentaerythritol tetranitrate (PETN) (CAS 78-11-5); 38. Picryl chloride (CAS 88-88-0); 39. 2,4,6 Trinitrotoluene (TNT) (CAS 118-96-7); 40. Nitroglycerine (NG) (CAS 55-63-0); 41. Triacetone Triperoxide (TATP) (CAS 17088-37-8); 42. Guanidine nitrate (CAS 506-93-4); 43. Nitroguanidine (NQ) (CAS 556 88 7); 44. DNAN (2,4-dinitroanisole) (CAS 119-27-7); 45. TEX (4,10-Dinitro-2,6,8,12-tetraoxa-4,10-diazaisowurtzitane); 46. GUDN (Guanylurea dinitramide) FOX-12 (CAS 217464-38-5); 47. Tetrazines as follows: a. BTAT (Bis(2,2,2-trinitroethyl)-3,6-diaminotetrazine); b. LAX-112 (3,6-diamino-1,2,4,5-tetrazine-1,4-dioxide); 48. Energetic ionic materials melting between 343 K (70 °C) and 373 K (100 °C) and with detonation velocity exceeding 6,800 m/s or detonation pressure exceeding 18 GPa (180 kbar); 49. BTNEN (Bis(2,2,2-trinitroethyl)-nitramine) (CAS 19836-28-3); 50. FTDO (5,6-(3′,4′-furazano)- 1,2,3,4-tetrazine-1,3-dioxide); 51. EDNA (Ethylenedinitramine) (CAS 505-71-5); 52. TKX-50 (Dihydroxylammonium 5,5′-bistetrazole-1,1′-diolate). Category 2—Materials Processing 2E003 Other “technology”, as follows (see List of Items Controlled). License Requirements Reason for Control: NS, AT Control(s) Country chart (see Supp. No. 1 to part 738) NS applies to entire entry NS Column 1. AT applies to entire entry AT Column 1. List Based License Exceptions (See Part 740 for a Description of All License Exceptions) TSR: Yes, except 2E003.b, .e and .f List of Items Controlled Related Controls: See 2E001, 2E002, and 2E101 for “development” and “use” technology for equipment that are designed or modified for densification of carbon-carbon composites, structural composite rocket nozzles and reentry vehicle nose tips. Related Definitions: N/A Items: a. [Reserved] b. “Technology” for metal-working manufacturing processes, as follows: b.1. “Technology” for the design of tools, dies or fixtures “specially designed” for any of the following processes: b.1.a. “Superplastic forming”; b.1.b. “Diffusion bonding”; or b.1.c. `Direct-acting hydraulic pressing'; b.2. [Reserved] N.B.: For “technology” for metal-working manufacturing processes for gas turbine engines and components, see 9E003 and USML Category XIX. Technical Note: `Direct-acting hydraulic pressing' is a deformation process which uses a fluid-filled flexible bladder in direct contact with the workpiece. c. “Technology” for the “development” or “production” of hydraulic stretch-forming machines and dies therefor, for the manufacture of airframe structures; d. [Reserved] e. “Technology” for the “development” of integration “software” for incorporation of expert systems for advanced decision support of shop floor operations into “numerical control” units; f. “Technology” for the application of inorganic overlay coatings or inorganic surface modification coatings (specified in column 3 of the following table) to non-electronic substrates (specified in column 2 of the following table), by processes specified in column 1 of the following table and defined in the Technical Note. N.B. This table should be read to control the technology of a particular `Coating Process' only when the resultant coating in column 3 is in a paragraph directly across from the relevant `Substrate' under column 2. For example, Chemical Vapor Deposition (CVD) `coating process' control the “technology” for a particular application of `silicides' to `Carbon-carbon, Ceramic and Metal “matrix” “composites” substrates, but are not controlled for the application of `silicides' to `Cemented tungsten carbide (16), Silicon carbide (18)' substrates. In the second case, the resultant coating is not listed in the paragraph under column 3 directly across from the paragraph under column 2 listing `Cemented tungsten carbide (16), Silicon carbide (18)'. Category 3—Electronics A. “End Items,” “Equipment,” “Accessories,” “Attachments,” “Parts,” “Components,” and “Systems” Note 1: The control status of equipment and “components” described in 3A001 or 3A002, other than those described in 3A001.a.3 to 3A001.a.10, 3A001.a.12 to 3A001.a.14, or 3A001.b.12, which are “specially designed” for or which have the same functional characteristics as other equipment is determined by the control status of the other equipment. 3A001 Electronic items as follows (see List of Items Controlled). Reason for Control: NS, RS, MT, NP, AT Control(s) Country chart (see Supp. No. 1 to part 738) NS applies to “Monolithic Microwave Integrated Circuit” (“MMIC”) amplifiers in 3A001.b.2 and discrete microwave transistors in 3A001.b.3, except those 3A001.b.2 and b.3 items being exported or reexported for use in civil telecommunications applications NS Column 1. NS applies to entire entry NS Column 2. RS applies “Monolithic Microwave Integrated Circuit” (“MMIC”) amplifiers in 3A001.b.2 and discrete microwave transistors in 3A001.b.3, except those 3A001.b.2 and b.3 items being exported or reexported for use in civil telecommunications applications RS Column 1. MT applies to 3A001.a.1.a when usable in “missiles”; and to 3A001.a.5.a when “designed or modified” for military use, hermetically sealed and rated for operation in the temperature range from below −54 °C to above +125 °C MT Column 1. NP applies to pulse discharge capacitors in 3A001.e.2 and superconducting solenoidal electromagnets in 3A001.e.3 that meet or exceed the technical parameters in 3A201.a and 3A201.b, respectively NP Column 1. AT applies to entire entry AT Column 1. Reporting Requirements: See § 743.1 of the EAR for reporting requirements for exports under 3A001.b.2 or b.3 under License Exceptions, and Validated End-User authorizations. License Requirements Note: See § 744.17 of the EAR for additional license requirements for microprocessors having a processing speed of 5 GFLOPS or more and an arithmetic logic unit with an access width of 32 bit or more, including those incorporating “information security” functionality, and associated “software” and “technology” for the “production” or “development” of such microprocessors. List Based License Exceptions (See Part 740 for a Description of All License Exceptions) LVS: N/A for MT or NP; N/A for “Monolithic Microwave Integrated Circuit” (“MMIC”) amplifiers in 3A001.b.2 and discrete microwave transistors in 3A001.b.3, except those that are being exported or reexported for use in civil telecommunications applications. Yes for: $1500: 3A001.c $3000: 3A001.b.1, b.2 (exported or reexported for use in civil telecommunications applications), b.3 (exported or reexported for use in civil telecommunications applications), b.9, .d, .e, .f, and .g. $5000: 3A001.a (except a.1.a and a.5.a when controlled for MT), .b.4 to b.7, and b.12. GBS: Yes for 3A001.a.1.b, a.2 to a.14 (except .a.5.a when controlled for MT), b.2 (exported or reexported for use in civil telecommunications applications), b.8 (except for “vacuum electronic devices” exceeding 18 GHz), b.9., b.10, .g, and .h, and .i. Special Conditions for STA STA: License Exception STA may not be used to ship any item in 3A001.b.2 or b.3, except those that are being exported or reexported for use in civil telecommunications applications, to any of the destinations listed in Country Group A:5 or A:6 (See Supplement No.1 to part 740 of the EAR). List of Items Controlled Related Controls: (1) See Category XV of the USML for certain “space-qualified” electronics and Category XI of the USML for certain ASICs, `transmit/receive modules,' or `transmit modules' “subject to the ITAR” (see 22 CFR parts 120 through 130). (2) See also 3A101, 3A201, 3A611, 3A991, and 9A515. Related Definitions: `Microcircuit' means a device in which a number of passive or active elements are considered as indivisibly associated on or within a continuous structure to perform the function of a circuit. For the purposes of integrated circuits in 3A001.a.1, 5 × 10 3 Gy(Si) = 5 × 10 5 Rads (Si); 5 × 10 6 Gy (Si)/s = 5 × 10 8 Rads (Si)/s. Items: a. General purpose integrated circuits, as follows: Note 1: Integrated circuits include the following types: — “Monolithic integrated circuits”; — “Hybrid integrated circuits”; — “Multichip integrated circuits”; — Film type integrated circuits, including silicon-on-sapphire integrated circuits”; — “Optical integrated circuits”; — “Three dimensional integrated circuits”; — “Monolithic Microwave Integrated Circuits” (“MMICs”). a.1. Integrated circuits designed or rated as radiation hardened to withstand any of the following: a.1.a. A total dose of 5 × 10 3 Gy (Si), or higher; a.1.b. A dose rate upset of 5 × 10 6 Gy (Si)/s, or higher; or a.1.c. A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 10 13 n/cm 2 or higher on silicon, or its equivalent for other materials; Note: 3A001.a.1.c does not apply to Metal Insulator Semiconductors (MIS). a.2. “Microprocessor microcircuits,” “microcomputer microcircuits,” microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analog-to-digital converters, integrated circuits that contain analog-to-digital converters and store or process the digitized data, digital-to-analog converters, electro-optical or “optical integrated circuits” designed for “signal processing”, field programmable logic devices, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used in unknown, Fast Fourier Transform (FFT) processors, Static Random-Access Memories (SRAMs), or `non-volatile memories,' having any of the following: Technical Note: `Non-volatile memories' are memories with data retention over a period of time after a power shutdown. a.2.a. Rated for operation at an ambient temperature above 398 K (+125 °C); a.2.b. Rated for operation at an ambient temperature below 218 K (−55 °C); or a.2.c. Rated for operation over the entire ambient temperature range from 218 K (−55 °C) to 398 K (+125 °C); Note: 3A001.a.2 does not apply to integrated circuits designed for civil automobile or railway train applications. a.3. “Microprocessor microcircuits”, “microcomputer microcircuits” and microcontroller microcircuits, manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz; Note: 3A001.a.3 includes digital signal processors, digital array processors and digital coprocessors. a.4. [Reserved] a.5. Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) integrated circuits, as follows: a.5.a. ADCs having any of the following: a.5.a.1. A resolution of 8 bit or more, but less than 10 bit, with a “sample rate” greater than 1.3 Giga Samples Per Second (GSPS); a.5.a.2. A resolution of 10 bit or more, but less than 12 bit, with a “sample rate” greater than 600 Mega Samples Per Second (MSPS); a.5.a.3. A resolution of 12 bit or more, but less than 14 bit, with a “sample rate” greater than 400 MSPS; a.5.a.4. A resolution of 14 bit or more, but less than 16 bit, with a “sample rate” greater than 250 MSPS; or a.5.a.5. A resolution of 16 bit or more with a “sample rate” greater than 65 MSPS; N.B.: For integrated circuits that contain analog-to-digital converters and store or process the digitized data see 3A001.a.14. Technical Notes: 1. A resolution of n bit corresponds to a quantization of 2 n levels. 2. The resolution of the ADC is the number of bits of the digital output that represents the measured analog input. Effective Number of Bits (ENOB) is not used to determine the resolution of the ADC. 3. For “multiple channel ADCs”, the “sample rate” is not aggregated and the “sample rate” is the maximum rate of any single channel. 4. For “interleaved ADCs” or for “multiple channel ADCs” that are specified to have an interleaved mode of operation, the “sample rates” are aggregated and the “sample rate” is the maximum combined total rate of all of the interleaved channels. a.5.b. Digital-to-Analog Converters (DAC) having any of the following: a.5.b.1. A resolution of 10-bit or more but less than 12-bit,with an `adjusted update rate' of exceeding 3,500 MSPS; or a.5.b.2. A resolution of 12-bit or more and having any of the following: a.5.b.2.a. An `adjusted update rate' exceeding 1,250 MSPS but not exceeding 3,500 MSPS, and having any of the following: a.5.b.2.a.1. A settling time less than 9 ns to arrive at or within 0.024% of full scale from a full scale step; or a.5.b.2.a.2. A `Spurious Free Dynamic Range' (SFDR) greater than 68 dBc (carrier) when synthesizing a full scale analog signal of 100 MHz or the highest full scale analog signal frequency specified below 100 MHz; or a.5.b.2.b. An `adjusted update rate' exceeding 3,500 MSPS; Technical Notes: 1. “Spurious Free Dynamic Range” (SFDR) is defined as the ratio of the RMS value of the carrier frequency (maximum signal component) at the input of the DAC to the RMS value of the next largest noise or harmonic distortion component at its output. 2. SFDR is determined directly from the specification table or from the characterization plots of SFDR versus frequency. 3. A signal is defined to be full scale when its amplitude is greater than -3 dBfs (full scale). 4. “Adjusted update rate” for DACs is: a. For conventional (non-interpolating) DACs, the “adjusted update rate” is the rate at which the digital signal is converted to an analog signal and the output analog values are changed by the DAC. For DACs where the interpolation mode may be bypassed (interpolation factor of one), the DAC should be considered as a conventional (non-interpolating) DAC. b. For interpolating DACs (oversampling DACs), the `adjusted update rate' is defined as the DAC update rate divided by the smallest interpolating factor. For interpolating DACs, the `adjusted update rate' may be referred to by different terms including: • input data rate • input word rate • input sample rate • maximum total input bus rate • maximum DAC clock rate for DAC clock input. a.6. Electro-optical and “optical integrated circuits”, designed for “signal processing” and having all of the following: a.6.a. One or more than one internal “laser” diode; a.6.b. One or more than one internal light detecting element; and a.6.c. Optical waveguides; a.7. “Field programmable logic devices” having any of the following: a.7.a. A maximum number of single-ended digital input/outputs of greater than 700; or a.7.b. An “aggregate one-way peak serial transceiver data rate” of 500 Gb/s or greater; Note: 3A001.a.7 includes: — Complex Programmable Logic Devices (CPLDs); — Field Programmable Gate Arrays (FPGAs); — Field Programmable Logic Arrays (FPLAs); — Field Programmable Interconnects (FPICs). N.B.: For integrated circuits having field programmable logic devices that are combined with an analog-to-digital converter, see 3A001.a.14. Technical Notes: 1. Maximum number of digital input/outputs in 3A001.a.7.a is also referred to as maximum user input/outputs or maximum available input/outputs, whether the integrated circuit is packaged or bare die. 2. “Aggregate one-way peak serial transceiver data rate” is the product of the peak serial one-way transceiver data rate times the number of transceivers on the FPGA. a.8. [Reserved] a.9. Neural network integrated circuits; a.10. Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: a.10.a. More than 1,500 terminals; a.10.b. A typical “basic gate propagation delay time” of less than 0.02 ns; or a.10.c. An operating frequency exceeding 3 GHz; a.11. Digital integrated circuits, other than those described in 3A001.a.3 to 3A001.a.10 and 3A001.a.12, based upon any compound semiconductor and having any of the following: a.11.a. An equivalent gate count of more than 3,000 (2 input gates); or a.11.b. A toggle frequency exceeding 1.2 GHz; a.12. Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log 2 N)/20,480 ms, where N is the number of points; Technical Note: When N is equal to 1,024 points, the formula in 3A001.a.12 gives an execution time of 500 µs. a.13. Direct Digital Synthesizer (DDS) integrated circuits having any of the following: a.13.a. A Digital-to-Analog Converter (DAC) clock frequency of 3.5 GHz or more and a DAC resolution of 10 bit or more, but less than 12 bit; or a.13.b. A DAC clock frequency of 1.25 GHz or more and a DAC resolution of 12 bit or more; Technical Note: The DAC clock frequency may be specified as the master clock frequency or the input clock frequency. a.14. Integrated circuits that perform or are programmable to perform all of the following: a.14.a. Analog-to-digital conversions meeting any of the following: a.14.a.1. A resolution of 8 bit or more, but less than 10 bit, with a “sample rate” greater than 1.3 Giga Samples Per Second (GSPS); a.14.a.2. A resolution of 10 bit or more, but less than 12 bit, with a “sample rate” greater than 1.0 GSPS; a.14.a.3. A resolution of 12 bit or more, but less than 14 bit, with a “sample rate” greater than 1.0 GSPS; a.14.a.4. A resolution of 14 bit or more, but less than 16 bit, with a “sample rate” greater than 400 Mega Samples Per Second (MSPS); or a.14.a.5. A resolution of 16 bit or more with a “sample rate” greater than 180 MSPS; and a.14.b. Any of the following: a.14.b.1. Storage of digitized data; or a.14.b.2. Processing of digitized data; N.B. 1: For analog-to-digital converter integrated circuits see 3A001.a.5.a. N.B. 2: For field programmable logic devices see 3A001.a.7. Technical Notes: 1. A resolution of n bit corresponds to a quantization of 2 n levels. 2. The resolution of the ADC is the number of bits of the digital output of the ADC that represents the measured analog input. Effective Number of Bits (ENOB) is not used to determine the resolution of the ADC. 3. For integrated circuits with non-interleaving “multiple channel ADCs”, the “sample rate” is not aggregated and the “sample rate” is the maximum rate of any single channel. 4. For integrated circuits with “interleaved ADCs” or with “multiple channel ADCs” that are specified to have an interleaved mode of operation, the “sample rates” are aggregated and the “sample rate” is the maximum combined total rate of all of the interleaved channels. b. Microwave or millimeter wave items, as follows: Technical Note: For purposes of 3A001.b, the parameter peak saturated power output may also be referred to on product data sheets as output power, saturated power output, maximum power output, peak power output, or peak envelope power output. b.1. “Vacuum electronic devices” and cathodes, as follows: Note 1: 3A001.b.1 does not control “vacuum electronic devices” designed or rated for operation in any frequency band and having all of the following: a. Does not exceed 31.8 GHz; and b. Is “allocated by the ITU” for radio-communications services, but not for radio-determination. Note 2: 3A001.b.1 does not control non-“space-qualified” “vacuum electronic devices” having all the following: a. An average output power equal to or less than 50 W; and b. Designed or rated for operation in any frequency band and having all of the following: 1. Exceeds 31.8 GHz but does not exceed 43.5 GHz; and 2. Is “allocated by the ITU” for radio-communications services, but not for radio-determination. b.1.a. Traveling-wave “vacuum electronic devices,” pulsed or continuous wave, as follows: b.1.a.1. Devices operating at frequencies exceeding 31.8 GHz; b.1.a.2. Devices having a cathode heater with a turn on time to rated RF power of less than 3 seconds; b.1.a.3. Coupled cavity devices, or derivatives thereof, with a “fractional bandwidth” of more than 7% or a peak power exceeding 2.5 kW; b.1.a.4. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having any of the following: b.1.a.4.a. An “instantaneous bandwidth” of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0.5; b.1.a.4.b. An “instantaneous bandwidth” of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1; b.1.a.4.c. Being “space-qualified”; or b.1.a.4.d. Having a gridded electron gun; b.1.a.5. Devices with a “fractional bandwidth” greater than or equal to 10%, with any of the following: b.1.a.5.a. An annular electron beam; b.1.a.5.b. A non-axisymmetric electron beam; or b.1.a.5.c. Multiple electron beams; b.1.b. Crossed-field amplifier “vacuum electronic devices” with a gain of more than 17 dB; b.1.c. Thermionic cathodes, designed for “vacuum electronic devices,” producing an emission current density at rated operating conditions exceeding 5 A/cm 2 or a pulsed (non-continuous) current density at rated operating conditions exceeding 10 A/cm 2 ; b.1.d. “Vacuum electronic devices” with the capability to operate in a “dual mode.” Technical Note: “Dual mode” means the “vacuum electronic device” beam current can be intentionally changed between continuous-wave and pulsed mode operation by use of a grid and produces a peak pulse output power greater than the continuous-wave output power. b.2. “Monolithic Microwave Integrated Circuit” (“MMIC”) amplifiers that are any of the following: N.B.: For “MMIC” amplifiers that have an integrated phase shifter see 3A001.b.12. b.2.a. Rated for operation at frequencies exceeding 2.7 GHz up to and including 6.8 GHz with a “fractional bandwidth” greater than 15%, and having any of the following: b.2.a.1. A peak saturated power output greater than 75 W (48.75 dBm) at any frequency exceeding 2.7 GHz up to and including 2.9 GHz; b.2.a.2. A peak saturated power output greater than 55 W (47.4 dBm) at any frequency exceeding 2.9 GHz up to and including 3.2 GHz; b.2.a.3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 3.2 GHz up to and including 3.7 GHz; or b.2.a.4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 3.7 GHz up to and including 6.8 GHz; b.2.b. Rated for operation at frequencies exceeding 6.8 GHz up to and including 16 GHz with a “fractional bandwidth” greater than 10%, and having any of the following: b.2.b.1. A peak saturated power output greater than 10 W (40 dBm) at any frequency exceeding 6.8 GHz up to and including 8.5 GHz; or b.2.b.2. A peak saturated power output greater than 5 W (37 dBm) at any frequency exceeding 8.5 GHz up to and including 16 GHz; b.2.c. Rated for operation with a peak saturated power output greater than 3 W (34.77 dBm) at any frequency exceeding 16 GHz up to and including 31.8 GHz, and with a “fractional bandwidth” of greater than 10%; b.2.d. Rated for operation with a peak saturated power output greater than 0.1 nW (−70 dBm) at any frequency exceeding 31.8 GHz up to and including 37 GHz; b.2.e. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43.5 GHz, and with a “fractional bandwidth” of greater than 10%; b.2.f. Rated for operation with a peak saturated power output greater than 31.62 mW (15 dBm) at any frequency exceeding 43.5 GHz up to and including 75 GHz, and with a “fractional bandwidth” of greater than 10%; b.2.g. Rated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a “fractional bandwidth” of greater than 5%; or b.2.h. Rated for operation with a peak saturated power output greater than 0.1 nW (−70 dBm) at any frequency exceeding 90 GHz; Note 1: [Reserved] Note 2: The control status of the “MMIC” whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.2.a through 3A001.b.2.h, is determined by the lowest peak saturated power output control threshold. Note 3: Notes 1 and 2 following the Category 3 heading for product group A. Systems, Equipment, and Components mean that 3A001.b.2 does not control “MMICs” if they are “specially designed” for other applications, e.g., telecommunications, radar, automobiles. b.3. Discrete microwave transistors that are any of the following: b.3.a. Rated for operation at frequencies exceeding 2.7 GHz up to and including 6.8 GHz and having any of the following: b.3.a.1. A peak saturated power output greater than 400 W (56 dBm) at any frequency exceeding 2.7 GHz up to and including 2.9 GHz; b.3.a.2. A peak saturated power output greater than 205 W (53.12 dBm) at any frequency exceeding 2.9 GHz up to and including 3.2 GHz; b.3.a.3. A peak saturated power output greater than 115 W (50.61 dBm) at any frequency exceeding 3.2 GHz up to and including 3.7 GHz; or b.3.a.4. A peak saturated power output greater than 60 W (47.78 dBm) at any frequency exceeding 3.7 GHz up to and including 6.8 GHz; b.3.b. Rated for operation at frequencies exceeding 6.8 GHz up to and including 31.8 GHz and having any of the following: b.3.b.1. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 6.8 GHz up to and including 8.5 GHz; b.3.b.2. A peak saturated power output greater than 15 W (41.76 dBm) at any frequency exceeding 8.5 GHz up to and including 12 GHz; b.3.b.3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or b.3.b.4. A peak saturated power output greater than 7 W (38.45 dBm) at any frequency exceeding 16 GHz up to and including 31.8 GHz; b.3.c. Rated for operation with a peak saturated power output greater than 0.5 W (27 dBm) at any frequency exceeding 31.8 GHz up to and including 37 GHz; b.3.d. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43.5 GHz; b.3.e. Rated for operation with a peak saturated power output greater than 0.1 nW (−70 dBm) at any frequency exceeding 43.5 GHz; or b.3.f. Other than those specified by 3A001.b.3.a to 3A001.b.3.e and rated for operation with a peak saturated power output greater than 5 W (37.0 dBm) at all frequencies exceeding 8.5 GHz up to and including 31.8 GHz; Note 1: The control status of a transistor in 3A001.b.3.a through 3A001.b.3.e, whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.3.a through 3A001.b.3.e, is determined by the lowest peak saturated power output control threshold. Note 2: 3A001.b.3 includes bare dice, dice mounted on carriers, or dice mounted in packages. Some discrete transistors may also be referred to as power amplifiers, but the status of these discrete transistors is determined by 3A001.b.3. b.4. Microwave solid state amplifiers and microwave assemblies/modules containing microwave solid state amplifiers, that are any of the following: b.4.a. Rated for operation at frequencies exceeding 2.7 GHz up to and including 6.8 GHz with a “fractional bandwidth” greater than 15%, and having any of the following: b.4.a.1. A peak saturated power output greater than 500 W (57 dBm) at any frequency exceeding 2.7 GHz up to and including 2.9 GHz; b.4.a.2. A peak saturated power output greater than 270 W (54.3 dBm) at any frequency exceeding 2.9 GHz up to and including 3.2 GHz; b.4.a.3. A peak saturated power output greater than 200 W (53 dBm) at any frequency exceeding 3.2 GHz up to and including 3.7 GHz; or b.4.a.4. A peak saturated power output greater than 90 W (49.54 dBm) at any frequency exceeding 3.7 GHz up to and including 6.8 GHz; b.4.b. Rated for operation at frequencies exceeding 6.8 GHz up to and including 31.8 GHz with a “fractional bandwidth” greater than 10%, and having any of the following: b.4.b.1. A peak saturated power output greater than 70 W (48.45 dBm) at any frequency exceeding 6.8 GHz up to and including 8.5 GHz; b.4.b.2. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 8.5 GHz up to and including 12 GHz; b.4.b.3. A peak saturated power output greater than 30 W (44.77 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or b.4.b.4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 16 GHz up to and including 31.8 GHz; b.4.c. Rated for operation with a peak saturated power output greater than 0.5 W (27 dBm) at any frequency exceeding 31.8 GHz up to and including 37 GHz; b.4.d. Rated for operation with a peak saturated power output greater than 2 W (33 dBm) at any frequency exceeding 37 GHz up to and including 43.5 GHz, and with a “fractional bandwidth” of greater than 10%; b.4.e. Rated for operation at frequencies exceeding 43.5 GHz and having any of the following: b.4.e.1. A peak saturated power output greater than 0.2 W (23 dBm) at any frequency exceeding 43.5 GHz up to and including 75 GHz, and with a “fractional bandwidth” of greater than 10%; b.4.e.2. A peak saturated power output greater than 20 mW (13 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a “fractional bandwidth” of greater than 5%; or b.4.e.3. A peak saturated power output greater than 0.1 nW (−70 dBm) at any frequency exceeding 90 GHz; or b.4.f. [Reserved] N.B.: 1. For “MMIC” amplifiers see 3A001.b.2. 2. For ‘transmit/receive modules’ and ‘transmit modules’ see 3A001.b.12. 3. For converters and harmonic mixers, designed to extend the operating or frequency range of signal analyzers, signal generators, network analyzers or microwave test receivers, see 3A001.b.7. Note 1: [Reserved] Note 2: The control status of an item whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.4.a through 3A001.b.4.e, is determined by the lowest peak saturated power output control threshold. b.5. Electronically or magnetically tunable band-pass or band-stop filters, having more than 5 tunable resonators capable of tuning across a 1.5:1 frequency band (f max /f min ) in less than 10 μs and having any of the following: b.5.a. A band-pass bandwidth of more than 0.5% of center frequency; or b.5.b. A band-stop bandwidth of less than 0.5% of center frequency; b.6. [Reserved] b.7. Converters and harmonic mixers, that are any of the following: b.7.a. Designed to extend the frequency range of “signal analyzers” beyond 90 GHz; b.7.b. Designed to extend the operating range of signal generators as follows: b.7.b.1. Beyond 90 GHz; b.7.b.2. To an output power greater than 100 mW (20 dBm) anywhere within the frequency range exceeding 43.5 GHz but not exceeding 90 GHz; b.7.c. Designed to extend the operating range of network analyzers as follows: b.7.c.1. Beyond 110 GHz; b.7.c.2. To an output power greater than 31.62 mW (15 dBm) anywhere within the frequency range exceeding 43.5 GHz but not exceeding 90 GHz; b.7.c.3. To an output power greater than 1 mW (0 dBm) anywhere within the frequency range exceeding 90 GHz but not exceeding 110 GHz; or b.7.d. Designed to extend the frequency range of microwave test receivers beyond 110 GHz; b.8. Microwave power amplifiers containing “vacuum electronic devices” controlled by 3A001.b.1 and having all of the following: b.8.a. Operating frequencies above 3 GHz; b.8.b. An average output power to mass ratio exceeding 80 W/kg; and b.8.c. A volume of less than 400 cm 3 ; Note: 3A001.b.8 does not control equipment designed or rated for operation in any frequency band which is “allocated by the ITU” for radio-communications services, but not for radio-determination. b.9. Microwave Power Modules (MPM) consisting of, at least, a traveling-wave “vacuum electronic device,” a “Monolithic Microwave Integrated Circuit” (“MMIC”) and an integrated electronic power conditioner and having all of the following: b.9.a. A ‘turn-on time’ from off to fully operational in less than 10 seconds; b.9.b. A volume less than the maximum rated power in Watts multiplied by 10 cm 3 /W; and b.9.c. An “instantaneous bandwidth” greater than 1 octave (f max > 2f min ) and having any of the following: b.9.c.1. For frequencies equal to or less than 18 GHz, an RF output power greater than 100 W; or b.9.c.2. A frequency greater than 18 GHz; Technical Notes: 1. To calculate the volume in 3A001.b.9.b, the following example is provided: for a maximum rated power of 20 W, the volume would be: 20 W × 10 cm 3 /W = 200 cm 3 . 2. The ‘turn-on time’ in 3A001.b.9.a refers to the time from fully-off to fully operational, i.e., it includes the warm-up time of the MPM. b.10. Oscillators or oscillator assemblies, specified to operate with a single sideband (SSB) phase noise, in dBc/Hz, less (better) than −(126 + 20log 10 F−20log 10 f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz; Technical Note: In 3A001.b.10, F is the offset from the operating frequency in Hz and f is the operating frequency in MHz. b.11. ‘Frequency synthesizer’ “electronic assemblies” having a “frequency switching time” as specified by any of the following: b.11.a. Less than 143 ps; b.11.b. Less than 100 μs for any frequency change exceeding 2.2 GHz within the synthesized frequency range exceeding 4.8 GHz but not exceeding 31.8 GHz; b.11.c. [Reserved] b.11.d. Less than 500 µs for any frequency change exceeding 550 MHz within the synthesized frequency range exceeding 31.8 GHz but not exceeding 37 GHz; b.11.e. Less than 100 µs for any frequency change exceeding 2.2 GHz within the synthesized frequency range exceeding 37 GHz but not exceeding 75 GHz; b.11.f. Less than 100 µs for any frequency change exceeding 5.0 GHz within the synthesized frequency range exceeding 75 GHz but not exceeding 90 GHz; or b.11.g. Less than 1 ms within the synthesized frequency range exceeding 90 GHz; Technical Note: A ‘frequency synthesizer’ is any kind of frequency source, regardless of the actual technique used, providing a multiplicity of simultaneous or alternative output frequencies, from one or more outputs, controlled by, derived from or disciplined by a lesser number of standard (or master) frequencies. N.B.: For general purpose “signal analyzers”, signal generators, network analyzers and microwave test receivers, see 3A002.c, 3A002.d, 3A002.e and 3A002.f, respectively. b.12. `Transmit/receive modules,' `transmit/receive MMICs,' `transmit modules,' and `transmit MMICs,' rated for operation at frequencies above 2.7 GHz and having all of the following: b.12.a. A peak saturated power output (in watts), P sat , greater than 505.62 divided by the maximum operating frequency (in GHz) squared [P sat >505.62 W*GHz 2 /f GHz 2 ] for any channel; b.12.b. A “fractional bandwidth” of 5% or greater for any channel; b.12.c. Any planar side with length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d≤15cm*GHz*N/f GHz ] where N is the number of transmit or transmit/receive channels; and b.12.d. An electronically variable phase shifter per channel. Technical Notes: 1. A `transmit/receive module' is a multifunction “electronic assembly” that provides bi-directional amplitude and phase control for transmission and reception of signals. 2. A `transmit module' is an “electronic assembly” that provides amplitude and phase control for transmission of signals. 3. A `transmit/receive MMIC' is a multifunction “MMIC” that provides bi-directional amplitude and phase control for transmission and reception of signals. 4. A `transmit MMIC' is a “MMIC” that provides amplitude and phase control for transmission of signals. 5. 2.7 GHz should be used as the lowest operating frequency (f GHz ) in the formula in 3A001.b.12.c for transmit/receive or transmit modules that have a rated operation range extending downward to 2.7 GHz and below [d≤15cm*GHz*N/2.7 GHz]. 6. 3A001.b.12 applies to `transmit/receive modules' or `transmit modules' with or without a heat sink. The value of d in 3A001.b.12.c does not include any portion of the `transmit/receive module' or `transmit module' that functions as a heat sink. 7. `Transmit/receive modules' or `transmit modules,' `transmit/receive MMICs' or `transmit MMICs' may or may not have N integrated radiating antenna elements where N is the number of transmit or transmit/receive channels. c. Acoustic wave devices as follows and “specially designed” “components” therefor: c.1. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having any of the following: c.1.a. A carrier frequency exceeding 6 GHz; c.1.b. A carrier frequency exceeding 1 GHz, but not exceeding 6 GHz and having any of the following: c.1.b.1. A `frequency side-lobe rejection' exceeding 65 dB; c.1.b.2. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100; c.1.b.3. A bandwidth greater than 250 MHz; or c.1.b.4. A dispersive delay of more than 10 μs; or c.1.c. A carrier frequency of 1 GHz or less and having any of the following: c.1.c.1. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100; c.1.c.2. A dispersive delay of more than 10 μs; or c.1.c.3. A `frequency side-lobe rejection' exceeding 65 dB and a bandwidth greater than 100 MHz; Technical Note: `Frequency side-lobe rejection' is the maximum rejection value specified in data sheet. c.2. Bulk (volume) acoustic wave devices that permit the direct processing of signals at frequencies exceeding 6 GHz; c.3. Acoustic-optic “signal processing” devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves that permit the direct processing of signals or images, including spectral analysis, correlation or convolution; Note: 3A001.c does not control acoustic wave devices that are limited to a single band pass, low pass, high pass or notch filtering, or resonating function. d. Electronic devices and circuits containing “components,” manufactured from “superconductive” materials, “specially designed” for operation at temperatures below the “critical temperature” of at least one of the “superconductive” constituents and having any of the following: d.1. Current switching for digital circuits using “superconductive” gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10 − 14 J; or d.2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10,000; e. High energy devices as follows: e.1. `Cells' as follows: e.1.a. `Primary cells' having any of the following at 20 °C: e.1.a.1. `Energy density' exceeding 550 Wh/kg and a `continuous power density' exceeding 50 W/kg; or e.1.a.2. `Energy density' exceeding 50 Wh/kg and a `continuous power density' exceeding 350 W/kg; e.1.b. `Secondary cells' having an `energy density' exceeding 350 Wh/kg at 20 °C; Technical Notes: 1. For the purpose of 3A001.e.1, `energy density' (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours (Ah) divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms. 2. For the purpose of 3A001.e.1, a `cell' is defined as an electrochemical device, which has positive and negative electrodes, an electrolyte, and is a source of electrical energy. It is the basic building block of a battery. 3. For the purpose of 3A001.e.1.a, a `primary cell' is a `cell' that is not designed to be charged by any other source. 4. For the purpose of 3A001.e.1.b, a `secondary cell' is a `cell' that is designed to be charged by an external electrical source. 5. For the purpose of 3A001.e.1.a, `continuous power density' (W/kg) is calculated from the nominal voltage multiplied by the specified maximum continuous discharge current in amperes (A) divided by the mass in kilograms. `Continuous power density' is also referred to as specific power. Note: 3A001.e does not control batteries, including single-cell batteries. e.2. High energy storage capacitors as follows: e.2.a. Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) and having all of the following: e.2.a.1. A voltage rating equal to or more than 5 kV; e.2.a.2. An energy density equal to or more than 250 J/kg; and e.2.a.3. A total energy equal to or more than 25 kJ; e.2.b. Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) and having all of the following: e.2.b.1. A voltage rating equal to or more than 5 kV; e.2.b.2. An energy density equal to or more than 50 J/kg; e.2.b.3. A total energy equal to or more than 100 J; and e.2.b.4. A charge/discharge cycle life equal to or more than 10,000; e.3. “Superconductive” electromagnets and solenoids, “specially designed” to be fully charged or discharged in less than one second and having all of the following: Note: 3A001.e.3 does not control “superconductive” electromagnets or solenoids “specially designed” for Magnetic Resonance Imaging (MRI) medical equipment. e.3.a. Energy delivered during the discharge exceeding 10 kJ in the first second; e.3.b. Inner diameter of the current carrying windings of more than 250 mm; and e.3.c. Rated for a magnetic induction of more than 8 T or “overall current density” in the winding of more than 300 A/mm 2 ; e.4. Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are “space-qualified,” having a minimum average efficiency exceeding 20% at an operating temperature of 301 K (28 °C) under simulated `AM0' illumination with an irradiance of 1,367 Watts per square meter (W/m 2 ); Technical Note: `AM0', or `Air Mass Zero', refers to the spectral irradiance of sun light in the earth's outer atmosphere when the distance between the earth and sun is one astronomical unit (AU). f. Rotary input type absolute position encoders having an “accuracy” equal to or less (better) than 1.0 second of arc and “specially designed” encoder rings, discs or scales therefor; g. Solid-state pulsed power switching thyristor devices and `thyristor modules', using either electrically, optically, or electron radiation controlled switch methods and having any of the following: g.1. A maximum turn-on current rate of rise (di/dt) greater than 30,000 A/μs and off-state voltage greater than 1,100 V; or g.2. A maximum turn-on current rate of rise (di/dt) greater than 2,000 A/μs and having all of the following: g.2.a. An off-state peak voltage equal to or greater than 3,000 V; and g.2.b. A peak (surge) current equal to or greater than 3,000 A; Note 1: 3A001.g. includes: — Silicon Controlled Rectifiers (SCRs) — Electrical Triggering Thyristors (ETTs) — Light Triggering Thyristors (LTTs) — Integrated Gate Commutated Thyristors (IGCTs) — Gate Turn-off Thyristors (GTOs) — MOS Controlled Thyristors (MCTs) — Solidtrons Note 2: 3A001.g does not control thyristor devices and `thyristor modules' incorporated into equipment designed for civil railway or “civil aircraft” applications. Technical Note: For the purposes of 3A001.g, a `thyristor module' contains one or more thyristor devices. h. Solid-state power semiconductor switches, diodes, or `modules', having all of the following: h.1. Rated for a maximum operating junction temperature greater than 488 K (215 °C); h.2. Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and h.3. Continuous current greater than 1 A. Technical Note: For the purposes of 3A001.h, `modules' contain one or more solid-state power semiconductor switches or diodes. Note 1: Repetitive peak off-state voltage in 3A001.h includes drain to source voltage, collector to emitter voltage, repetitive peak reverse voltage and peak repetitive off-state blocking voltage. Note 2: 3A001.h includes: — Junction Field Effect Transistors (JFETs) — Vertical Junction Field Effect Transistors (VJFETs) — Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) — Double Diffused Metal Oxide Semiconductor Field Effect Transistor (DMOSFET) — Insulated Gate Bipolar Transistor (IGBT) — High Electron Mobility Transistors (HEMTs) — Bipolar Junction Transistors (BJTs) — Thyristors and Silicon Controlled Rectifiers (SCRs) — Gate Turn-Off Thyristors (GTOs) — Emitter Turn-Off Thyristors (ETOs) — PiN Diodes — Schottky Diodes Note 3: 3A001.h does not apply to switches, diodes, or `modules', incorporated into equipment designed for civil automobile, civil railway, or “civil aircraft” applications. i. Intensity, amplitude, or phase electro-optic modulators, designed for analog signals and having any of the following: i.1. A maximum operating frequency of more than 10 GHz but less than 20 GHz, an optical insertion loss equal to or less than 3 dB and having any of the following: i.1.a. A `half-wave voltage' (`Vπ') less than 2.7 V when measured at a frequency of 1 GHz or below; or i.1.b. A `Vπ' of less than 4 V when measured at a frequency of more than 1 GHz; or i.2. A maximum operating frequency equal to or greater than 20 GHz, an optical insertion loss equal to or less than 3 dB and having any of the following: i.2.a. A `Vπ' less than 3.3 V when measured at a frequency of 1 GHz or below; or i.2.b. A `Vπ' less than 5 V when measured at a frequency of more than 1 GHz. Note: 3A001.i includes electro-optic modulators having optical input and output connectors (e.g., fiber-optic pigtails). Technical Note: For the purposes of 3A001.i, a `half-wave voltage' (`Vπ') is the applied voltage necessary to make a phase change of 180 degrees in the wavelength of light propagating through the optical modulator. 3A002 General purpose “electronic assemblies,” modules and equipment, as follows (see List of Items Controlled). License Requirements Reason for Control: NS, MT, AT Control(s) Country chart (see Supp. No. 1 to part 738) NS applies to entire entry NS Column 2. MT applies to 3A002.h when the parameters in 3A101.a.2.b are met or exceeded MT Column 1. AT applies to entire entry AT Column 1. Reporting Requirements See § 743.1 of the EAR for reporting requirements for exports under License Exceptions, and Validated End-User authorizations. List Based License Exceptions (See Part 740 for a Description of All License Exceptions) LVS: $3000: 3A002.a, .e, .f, and .g $5000: 3A002.c to .d, and .h (unless controlled for MT); GBS: Yes, for 3A002.h (unless controlled for MT) Special Conditions for STA STA: License Exception STA may not be used to ship any item in 3A002.g.1 to any of the destinations listed in Country Group A:6 (See Supplement No.1 to part 740 of the EAR). List of Items Controlled Related Controls: See Category XV(e)(9) of the USML for certain “space-qualified” atomic frequency standards “subject to the ITAR” (see 22 CFR parts 120 through 130). See also 3A101, 3A992 and 9A515.x. Related Definitions: Constant percentage bandwidth filters are also known as octave or fractional octave filters. Items: a. Recording equipment and oscilloscopes, as follows: a.1. to a.5. [Reserved] N.B.: For waveform digitizers and transient recorders, see 3A002.h. a.6. Digital data recorders having all of the following: a.6.a. A sustained `continuous throughput' of more than 6.4 Gbit/s to disk or solid-state drive memory; and a.6.b. “Signal processing” of the radio frequency signal data while it is being recorded; Technical Notes: 1. For recorders with a parallel bus architecture, the `continuous throughput' rate is the highest word rate multiplied by the number of bits in a word. 2. `Continuous throughput' is the fastest data rate the instrument can record to disk or solid-state drive memory without the loss of any information while sustaining the input digital data rate or digitizer conversion rate. a.7. Real-time oscilloscopes having a vertical root-mean-square (rms) noise voltage of less than 2% of full-scale at the vertical scale setting that provides the lowest noise value for any input 3dB bandwidth of 60 GHz or greater per channel; Note: 3A002.a.7 does not apply to equivalent-time sampling oscilloscopes. b. [Reserved] c. “Signal analyzers” as follows: c.1. “Signal analyzers” having a 3 dB resolution bandwidth (RBW) exceeding 40 MHz anywhere within the frequency range exceeding 31.8 GHz but not exceeding 37 GHz; c.2. “Signal analyzers” having a Displayed Average Noise Level (DANL) less (better) than −150 dBm/Hz anywhere within the frequency range exceeding 43.5 GHz but not exceeding 90 GHz; c.3. “Signal analyzers” having a frequency exceeding 90 GHz; c.4. “Signal analyzers” having all of the following: c.4.a. `Real-time bandwidth' exceeding 170 MHz; and c.4.b. Having any of the following: c.4.b.1. 100% probability of discovery, with less than a 3 dB reduction from full amplitude due to gaps or windowing effects, of signals having a duration of 15 μs or less; or c.4.b.2. A `frequency mask trigger' function, with 100% probability of trigger (capture) for signals having a duration of 15 μs or less; Technical Notes: 1. `Real-time bandwidth' is the widest frequency range for which the analyzer can continuously transform time-domain data entirely into frequency-domain results, using a Fourier or other discrete time transform that processes every incoming time point, without a reduction of measured amplitude of more than 3 dB below the actual signal amplitude caused by gaps or windowing effects, while outputting or displaying the transformed data. 2. Probability of discovery in 3A002.c.4.b.1 is also referred to as probability of intercept or probability of capture. 3. For the purposes of 3A002.c.4.b.1, the duration for 100% probability of discovery is equivalent to the minimum signal duration necessary for the specified level measurement uncertainty. 4. A `frequency mask trigger' is a mechanism where the trigger function is able to select a frequency range to be triggered on as a subset of the acquisition bandwidth while ignoring other signals that may also be present within the same acquisition bandwidth. A `frequency mask trigger' may contain more than one independent set of limits. Note: 3A002.c.4 does not apply to those “signal analyzers” using only constant percentage bandwidth filters (also known as octave or fractional octave filters). c.5. [Reserved] d. Signal generators having any of the following: d.1. Specified to generate pulse-modulated signals having all of the following, anywhere within the frequency range exceeding 31.8 GHz but not exceeding 37 GHz: d.1.a. `Pulse duration' of less than 25 ns; and d.1.b. On/off ratio equal to or exceeding 65 dB; d.2. An output power exceeding 100 mW (20 dBm) anywhere within the frequency range exceeding 43.5 GHz but not exceeding 90 GHz; d.3. A “frequency switching time” as specified by any of the following: d.3.a. [Reserved] d.3.b. Less than 100 μs for any frequency change exceeding 2.2 GHz within the frequency range exceeding 4.8 GHz but not exceeding 31.8 GHz; d.3.c. [Reserved] d.3.d. Less than 500 μs for any frequency change exceeding 550 MHz within the frequency range exceeding 31.8 GHz but not exceeding 37 GHz; d.3.e. Less than 100 μs for any frequency change exceeding 2.2 GHz within the frequency range exceeding 37 GHz but not exceeding 75 GHz; or d.3.f. [Reserved] d.3.g. Less than 100 μs for any frequency change exceeding 5.0 GHz within the frequency range exceeding 75 GHz but not exceeding 90 GHz. d.4. A single sideband (SSB) phase noise, in dBc/Hz, specified as being any of the following: d.4.a. Less (better) than −(126 + 20 log 10 F−20log 10 f) for anywhere within the range of 10 Hz ≤ F ≤ 10 kHz anywhere within the frequency range exceeding 3.2 GHz but not exceeding 90 GHz; or d.4.b. Less (better) than −(206−20log 10 f) for anywhere within the range of 10 kHz < F ≤ 100 kHz anywhere within the frequency range exceeding 3.2 GHz but not exceeding 90 GHz; Technical Note: In 3A002.d.4, F is the offset from the operating frequency in Hz and f is the operating frequency in MHz. d.5. An `RF modulation bandwidth' of digital baseband signals as specified by any of the following: d.5.a. Exceeding 2.2 GHz within the frequency range exceeding 4.8 GHz but not exceeding 31.8 GHz; d.5.b. Exceeding 550 MHz within the frequency range exceeding 31.8 GHz but not exceeding 37 GHz; d.5.c. Exceeding 2.2 GHz within the frequency range exceeding 37 GHz but not exceeding 75 GHz; d.5.d. Exceeding 5.0 GHz within the frequency range exceeding 75 GHz but not exceeding 90 GHz; or Technical Note: `RF modulation bandwidth' is the Radio Frequency (RF) bandwidth occupied by a digitally encoded baseband signal modulated onto an RF signal. It is also referred to as information bandwidth or vector modulation bandwidth. I/Q digital modulation is the technical method for producing a vector-modulated RF output signal, and that output signal is typically specified as having an `RF modulation bandwidth'. d.6. A maximum frequency exceeding 90 GHz; Note 1: For the purpose of 3A002.d, signal generators include arbitrary waveform and function generators. Note 2: 3A002.d does not control equipment in which the output frequency is either produced by the addition or subtraction of two or more crystal oscillator frequencies, or by an addition or subtraction followed by a multiplication of the result. Technical Notes: 1. The maximum frequency of an arbitrary waveform or function generator is calculated by dividing the sample rate, in samples/second, by a factor of 2.5. 2. For the purposes of 3A002.d.1.a, `pulse duration' is defined as the time interval from the point on the leading edge that is 50% of the pulse amplitude to the point on the trailing edge that is 50% of the pulse amplitude. e. Network analyzers having any of the following: e.1. An output power exceeding 31.62 mW (15 dBm) anywhere within the operating frequency range exceeding 43.5 GHz but not exceeding 90 GHz; e.2. An output power exceeding 1 mW (0 dBm) anywhere within the operating frequency range exceeding 90 GHz but not exceeding 110 GHz; e.3. `Nonlinear vector measurement functionality' at frequencies exceeding 50 GHz but not exceeding 110 GHz; or Technical Note: `Nonlinear vector measurement functionality' is an instrument's ability to analyze the test results of devices driven into the large-signal domain or the non-linear distortion range. e.4. A maximum operating frequency exceeding 110 GHz; f. Microwave test receivers having all of the following: f.1. Maximum operating frequency exceeding 110 GHz; and f.2. Being capable of measuring amplitude and phase simultaneously; g. Atomic frequency standards being any of the following: g.1. “Space-qualified”; g.2. Non-rubidium and having a long-term stability less (better) than 1 × 10 − 11 /month; or g.3. Non-“space-qualified” and having all of the following: g.3.a. Being a rubidium standard; g.3.b. Long-term stability less (better) than 1 × 10 − 11 /month; and g.3.c. Total power consumption of less than 1 Watt. h. “Electronic assemblies,” modules or equipment, specified to perform all of the following: h.1. Analog-to-digital conversions meeting any of the following: h.1.a. A resolution of 8 bit or more, but less than 10 bit, with a “sample rate” greater than 1.3 Giga Samples Per Second (GSPS); h.1.b. A resolution of 10 bit or more, but less than 12 bit, with a “sample rate” greater than 1.0 GSPS; h.1.c. A resolution of 12 bit or more, but less than 14 bit, with a “sample rate” greater than 1.0 GSPS; h.1.d. A resolution of 14 bit or more but less than 16 bit, with a “sample rate” greater than 400 Mega Samples Per Second (MSPS); or h.1.e. A resolution of 16 bit or more with a “sample rate” greater than 180 MSPS; and h.2. Any of the following: h.2.a. Output of digitized data; h.2.b. Storage of digitized data; or h.2.c. Processing of digitized data; N.B.: Digital data recorders, oscilloscopes, “signal analyzers,” signal generators, network analyzers and microwave test receivers, are specified by 3A002.a.6, 3A002.a.7, 3A002.c, 3A002.d, 3A002.e and 3A002.f, respectively. Technical Notes: 1. A resolution of n bit corresponds to a quantization of 2 n levels. 2. The resolution of the ADC is the number of bits of the digital output of the ADC that represents the measured analog input word. Effective Number of Bits (ENOB) is not used to determine the resolution of the ADC. 3. For non-interleaved multiple-channel “electronic assemblies”, modules, or equipment, the “sample rate” is not aggregated and the “sample rate” is the maximum rate of any single channel. 4. For interleaved channels on multiple-channel “electronic assemblies”, modules, or equipment, the “sample rates” are aggregated and the “sample rate” is the maximum combined total rate of all the interleaved channels. Note: 3A002.h includes ADC cards, waveform digitizers, data acquisition cards, signal acquisition boards and transient recorders. Category 5—Telecommunications and “Information Security” II. Non-Cryptographic “Information Security” 5A003 “Systems,” “equipment” and “components,” for non-cryptographic “information security,” as follows (see List of Items Controlled). License Requirements Reason for Control: NS, AT Control(s) Country chart (see Supp. No. 1 to part 738) NS applies to entire entry NS Column 2. AT applies to entire entry AT Column 1. List Based License Exceptions (See Part 740 for a Description of All License Exceptions) LVS: Yes: $500 for “components.” N/A for systems and equipment. GBS: N/A List of Items Controlled Related Controls: N/A Related Definitions: N/A Items: a. Communications cable systems designed or modified to use mechanical, electrical or electronic means to detect surreptitious intrusion; Note: 5A003.a applies only to physical layer security. For the purpose of 5A003.a, the physical layer includes Layer 1 of the Reference Model of Open Systems Interconnection (OSI) (ISO/IEC 7498-1). b. “Specially designed” or modified to reduce the compromising emanations of information-bearing signals beyond what is necessary for health, safety or electromagnetic interference standards. Category 6—Sensors and Lasers 6A005 “Lasers”, “components” and optical equipment, as follows (see List of Items Controlled), excluding items that are subject to the export licensing authority of the Nuclear Regulatory Commission (see 10 CFR part 110). License Requirements Reason for Control: NS, NP, AT Control(s) Country chart (see Supp. No. 1 to part 738) NS applies to entire entry NS Column 2. NP applies to lasers controlled by 6A005.a.2, a.3, a.4, b.2.b, b.3, b.4, b.6.c, c.1.b, c.2.b, d.2, d.3.c, or d.4.c that meet or exceed the technical parameters described in 6A205 NP Column 1. AT applies to entire entry AT Column 1. List Based License Exceptions (See Part 740 for a Description of All License Exceptions) LVS: N/A for NP items $3000 for all other items GBS: Neodymium-doped (other than glass) “lasers” controlled by 6A005.b.6.d.2 (except 6A005.b.6.d.2.b) that have an output wavelength exceeding 1,000 nm, but not exceeding 1,100 nm, and an average or CW output power not exceeding 2 kW, and operate in a pulse-excited, non- “Q-switched” multiple-transverse mode, or in a continuously excited, multiple-transverse mode; Dye and Liquid Lasers controlled by 6A005.c.1, c.2 and c.3, except for a pulsed single longitudinal mode oscillator having an average output power exceeding 1 W and a repetition rate exceeding 1 kHz if the “pulse duration” is less than 100 ns; CO “lasers” controlled by 6A005.d.2 having a CW maximum rated single or multimode output power not exceeding 10 kW; CO 2 or CO/CO 2 “lasers” controlled by 6A005.d.3 having an output wavelength in the range from 9,000 to 11,000 nm and having a pulsed output not exceeding 2 J per pulse and a maximum rated average single or multimode output power not exceeding 5 kW; and CO 2 “lasers” controlled by 6A005.d.3 that operate in CW multiple-transverse mode, and having a CW output power not exceeding 15 kW. List of Items Controlled Related Controls (1) See ECCN 6D001 for “software” for items controlled under this entry. (2) See ECCNs 6E001 (“development”), 6E002 (“production”), and 6E201 (“use”) for technology for items controlled under this entry. (3) Also see ECCNs 6A205 and 6A995. (4) See ECCN 3B001 for excimer “lasers” “specially designed” for lithography equipment. (5) “Lasers” “specially designed” or prepared for use in isotope separation are subject to the export licensing authority of the Nuclear Regulatory Commission (see 10 CFR part 110). (6) See USML Category XII(b) and (e) for laser systems or lasers subject to the ITAR. (7) See USML Category XVIII for certain laser-based directed energy weapon systems, equipment, and components subject to the ITAR. Related Definitions: (1) `Wall-plug efficiency' is defined as the ratio of “laser” output power (or “average output power”) to total electrical input power required to operate the “laser”, including the power supply/conditioning and thermal conditioning/heat exchanger, see 6A005.a.6.b.1 and 6A005.b.6; (2) `Non-repetitive pulsed' refers to “lasers” that produce either a single output pulse or that have a time interval between pulses exceeding one minute, see Note 2 of 6A005 and 6A005.d.6. Items: Notes: 1. Pulsed “lasers” include those that run in a continuous wave (CW) mode with pulses superimposed. 2. Excimer, semiconductor, chemical, CO, CO 2 , and `non-repetitive pulsed' Nd:glass “lasers” are only specified by 6A005.d. Technical Note: `Non-repetitive pulsed' refers to “lasers” that produce either a single output pulse or that have a time interval between pulses exceeding one minute. 3. 6A005 includes fiber “lasers”. 4. The control status of “lasers” incorporating frequency conversion (i.e., wavelength change) by means other than one “laser” pumping another “laser” is determined by applying the control parameters for both the output of the source “laser” and the frequency-converted optical output. 5. 6A005 does not control “lasers” as follows: a. Ruby with output energy below 20 J; b. Nitrogen; c. Krypton. 6. For the purposes of 6A005.a and 6A005.b, `single transverse mode' refers to “lasers” with a beam profile having an M 2 -factor of less than 1.3, while `multiple transverse mode' refers to “lasers” with a beam profile having an M 2 -factor of 1.3 or higher. a. Non-“tunable” continuous wave “(CW) lasers” having any of the following: a.1. Output wavelength less than 150 nm and output power exceeding 1W; a.2. Output wavelength of 150 nm or more but not exceeding 510 nm and output power exceeding 30 W; Note: 6A005.a.2 does not control Argon “lasers” having an output power equal to or less than 50 W. a.3. Output wavelength exceeding 510 nm but not exceeding 540 nm and any of the following: a.3.a. `Single transverse mode' output and output power exceeding 50 W; or a.3.b. `Multiple transverse mode' output and output power exceeding 150 W; a.4. Output wavelength exceeding 540 nm but not exceeding 800 nm and output power exceeding 30 W; a.5. Output wavelength exceeding 800 nm but not exceeding 975 nm and any of the following: a.5.a. `Single transverse mode' output and output power exceeding 50 W; or a.5.b. `Multiple transverse mode' output and output power exceeding 80 W; a.6. Output wavelength exceeding 975 nm but not exceeding 1,150 nm and any of the following; a.6.a. `Single transverse mode' output and any of the following: a.6.a.1. Output power exceeding 1,000 W; or a.6.a.2. Having all of the following: a.6.a.2.a. Output power exceeding 500 W; and a.6.a.2.b. Spectral bandwidth less than 40 GHz; or a.6.b. `Multiple transverse mode' output and any of the following: a.6.b.1. `Wall-plug efficiency' exceeding 18% and output power exceeding 1,000 W; or a.6.b.2. Output power exceeding 2 kW; Note 1: 6A005.a.6.b does not control `multiple transverse mode', industrial “lasers” with output power exceeding 2 kW and not exceeding 6 kW with a total mass greater than 1,200 kg. For the purpose of this note, total mass includes all “components” required to operate the “laser,” e.g., “laser,” power supply, heat exchanger, but excludes external optics for beam conditioning or delivery. Note 2: 6A005.a.6.b does not apply to `multiple transverse mode', industrial “lasers” having any of the following: a. [Reserved]; b. Output power exceeding 1 kW but not exceeding 1.6 kW and having a BPP exceeding 1.25 mm•mrad; c. Output power exceeding 1.6 kW but not exceeding 2.5 kW and having a BPP exceeding 1.7 mm•mrad; d. Output power exceeding 2.5 kW but not exceeding 3.3 kW and having a BPP exceeding 2.5 mm•mrad; e. Output power exceeding 3.3 kW but not exceeding 6 kW and having a BPP exceeding 3.5 mm•mrad; f. [Reserved] g. [Reserved] h. Output power exceeding 6 kW but not exceeding 8 kW and having a BPP exceeding 12 mm•mrad; or i. Output power exceeding 8 kW but not exceeding 10 kW and having a BPP exceeding 24 mm•mrad; a.7. Output wavelength exceeding 1,150 nm but not exceeding 1,555 nm and any of the following: a.7.a. `Single transverse mode' and output power exceeding 50 W; or a.7.b. `Multiple transverse mode' and output power exceeding 80 W; a.8. Output wavelength exceeding 1,555 nm but not exceeding 1,850 nm and output power exceeding 1 W; a.9. Output wavelength exceeding 1,850 nm but not exceeding 2,100 nm, and any of the following: a.9.a. `Single transverse mode' and output power exceeding 1 W; or a.9. b. `Multiple transverse mode' output and output power exceeding 120 W; or a.10. Output wavelength exceeding 2,100 nm and output power exceeding 1 W; b. Non-“tunable” “pulsed lasers” having any of the following: b.1. Output wavelength less than 150 nm and any of the following: b.1.a. Output energy exceeding 50 mJ per pulse and “peak power” exceeding 1 W; or b.1.b. “Average output power” exceeding 1 W; b.2. Output wavelength of 150 nm or more but not exceeding 510 nm and any of the following: b.2.a. Output energy exceeding 1.5 J per pulse and “peak power” exceeding 30 W; or b.2.b. “Average output power” exceeding 30 W; Note: 6A005.b.2.b does not control Argon “lasers” having an “average output power” equal to or less than 50 W. b.3. Output wavelength exceeding 510 nm, but not exceeding 540 nm and any of the following: b.3.a. `Single transverse mode' output and any of the following: b.3.a.1. Output energy exceeding 1.5 J per pulse and “peak power” exceeding 50 W; or b.3.a.2. “Average output power” exceeding 50 W; or b.3.b. `Multiple transverse mode' output and any of the following: b.3.b.1. Output energy exceeding 1.5 J per pulse and “peak power” exceeding 150 W; or b.3.b.2. “Average output power” exceeding 150 W; b.4. Output wavelength exceeding 540 nm but not exceeding 800 nm and any of the following: b.4.a. “Pulse duration” less than 1 ps and any of the following: b.4.a.1. Output energy exceeding 0.005 J per pulse and “peak power” exceeding 5 GW; or b.4.a.2. “Average output power” exceeding 20 W; or b.4.b. “Pulse duration” equal to or exceeding 1 ps and any of the following: b.4.b.1. Output energy exceeding 1.5 J per pulse and “peak power” exceeding 30 W; or b.4.b.2. “Average output power” exceeding 30 W; b.5. Output wavelength exceeding 800 nm but not exceeding 975 nm and any of the following: b.5.a. “Pulse duration” less than 1ps and any of the following: b.5.a.1. Output energy exceeding 0.005 J per pulse and “peak power” exceeding 5 GW; or b.5.a.2. `Single transverse mode' output and “average output power” exceeding 20 W; b.5.b. “Pulse duration” equal to or exceeding 1 ps and not exceeding 1 μs and any of the following: b.5.b.1. Output energy exceeding 0.5 J per pulse and “peak power” exceeding 50 W; b.5.b.2. `Single transverse mode' output and “average output power” exceeding 20 W; or b.5.b.3. `Multiple transverse mode' output and “average output power” exceeding 50 W; or b.5.c. “Pulse duration” exceeding 1 μs and any of the following: b.5.c.1. Output energy exceeding 2 J per pulse and “peak power” exceeding 50 W; b.5.c.2. `Single transverse mode' output and “average output power” exceeding 50 W; or b.5.c.3. `Multiple transverse mode' output and “average output power” exceeding 80 W. b.6. Output wavelength exceeding 975 nm but not exceeding 1,150 nm and any of the following: b.6.a. “Pulse duration” of less than 1 ps, and any of the following: b.6.a.1. Output “peak power” exceeding 2 GW per pulse; b.6.a.2. “Average output power” exceeding 30 W; or b.6.a.3. Output energy exceeding 0.002 J per pulse; b.6.b. “Pulse duration” equal to or exceeding 1 ps and less than 1 ns, and any of the following: b.6.b.1. Output “peak power” exceeding 5 GW per pulse; b.6.b.2. “Average output power” exceeding 50 W; or b.6.b.3. Output energy exceeding 0.1 J per pulse; b.6.c. “Pulse duration” equal to or exceeding 1 ns but not exceeding 1 μs and any of the following: b.6.c.1. `Single transverse mode' output and any of the following: b.6.c.1.a. “Peak power” exceeding 100 MW; b.6.c.1.b. “Average output power” exceeding 20 W limited by design to a maximum pulse repetition frequency less than or equal to 1 kHz; b.6.c.1.c. `Wall-plug efficiency' exceeding 12%, “average output power” exceeding 100 W and capable of operating at a pulse repetition frequency greater than 1 kHz; b.6.c.1.d. “Average output power” exceeding 150 W and capable of operating at a pulse repetition frequency greater than 1 kHz; or b.6.c.1.e. Output energy exceeding 2 J per pulse; or b.6.c.2. `Multiple transverse mode' output and any of the following: b.6.c.2.a. “Peak power” exceeding 400 MW; b.6.c.2.b. `Wall-plug efficiency' exceeding 18% and “average output power” exceeding 500 W; b.6.c.2.c. “Average output power” exceeding 2 kW; or b.6.c.2.d. Output energy exceeding 4 J per pulse; or b.6.d. “Pulse duration” exceeding 1 μs and any of the following: b.6.d.1. `Single transverse mode' output and any of the following: b.6.d.1.a. “Peak power” exceeding 500 kW; b.6.d.1.b. `Wall-plug efficiency' exceeding 12% and “average output power” exceeding 100 W; or b.6.d.1.c. “Average output power” exceeding 150 W; or b.6.d.2. `Multiple transverse mode' output and any of the following: b.6.d.2.a. “Peak power” exceeding 1 MW; b.6.d.2.b. `Wall-plug efficiency' exceeding 18% and “average output power” exceeding 500 W; or b.6.d.2.c. “Average output power” exceeding 2 kW; b.7. Output wavelength exceeding 1,150 nm but not exceeding 1,555 nm and any of the following: b.7.a. “Pulse duration” not exceeding 1 μs and any of the following: b.7.a.1. Output energy exceeding 0.5 J per pulse and “peak power” exceeding 50 W; b.7.a.2. `Single transverse mode' output and “average output power” exceeding 20 W; or b.7.a.3. `Multiple transverse mode' output and “average output power” exceeding 50 W; or b.7.b. “Pulse duration” exceeding 1 μs and any of the following: b.7.b.1. Output energy exceeding 2 J per pulse and “peak power” exceeding 50 W; b.7.b.2. `Single transverse mode' output and “average output power” exceeding 50 W; or b.7.b.3. `Multiple transverse mode' output and “average output power” exceeding 80 W; b.8. Output wavelength exceeding 1,555 nm but not exceeding 1,850 nm, and any of the following: b.8.a. Output energy exceeding 100 mJ per pulse and “peak power” exceeding 1 W; or b.8.b. “Average output power” exceeding 1 W; b.9. Output wavelength exceeding 1,850 nm but not exceeding 2,100 nm, and any of the following: b.9.a. `Single transverse mode' and any of the following: b.9.a.1. Output energy exceeding 100 mJ per pulse and “peak power” exceeding 1 W; or b.9.a.2. “Average output power” exceeding 1 W; b.9.b. `Multiple transverse mode' and any of the following: b.9.b.1. Output energy exceeding 100 mJ per pulse and “peak power” exceeding 10 kW; or b.9.b.2. “Average output power” exceeding 120 W; or b.10. Output wavelength exceeding 2,100 nm and any of the following: b.10.a. Output energy exceeding 100 mJ per pulse and “peak power” exceeding 1 W; or b.10.b. “Average output power” exceeding 1 W; c. “Tunable” lasers having any of the following: c.1. Output wavelength less than 600 nm and any of the following: c.1.a. Output energy exceeding 50 mJ per pulse and “peak power” exceeding 1 W; or c.1.b. Average or CW output power exceeding 1W; Note: 6A005.c.1 does not apply to dye “lasers” or other liquid “lasers,” having a multimode output and a wavelength of 150 nm or more but not exceeding 600 nm and all of the following: 1. Output energy less than 1.5 J per pulse or a “peak power” less than 20 W; and 2. Average or CW output power less than 20 W. c.2. Output wavelength of 600 nm or more but not exceeding 1,400 nm, and any of the following: c.2.a. Output energy exceeding 1 J per pulse and “peak power” exceeding 20 W; or c.2.b. Average or CW output power exceeding 20 W; or c.3. Output wavelength exceeding 1,400 nm and any of the following: c.3.a. Output energy exceeding 50 mJ per pulse and “peak power” exceeding 1 W; or c.3.b. Average or CW output power exceeding 1 W; d. Other “lasers”, not controlled by 6A005.a, 6A005.b, or 6A005.c as follows: d.1. Semiconductor “lasers” as follows: Notes: 1. 6A005.d.1 includes semiconductor “lasers” having optical output connectors (e.g., fiber optic pigtails). 2. The control status of semiconductor “lasers” “specially designed” for other equipment is determined by the control status of the other equipment. d.1.a. Individual single transverse mode semiconductor “lasers” having any of the following: d.1.a.1. Wavelength equal to or less than 1,510 nm and average or CW output power, exceeding 1.5 W; or d.1.a.2. Wavelength greater than 1,510 nm and average or CW output power, exceeding 500 mW; d.1.b. Individual `multiple-transverse mode' semiconductor “lasers” having any of the following: d.1.b.1. Wavelength of less than 1,400 nm and average or CW output power, exceeding 25 W; d.1.b.2. Wavelength equal to or greater than 1,400 nm and less than 1,900 nm and average or CW output power, exceeding 2.5 W; or d.1.b.3. Wavelength equal to or greater than 1,900 nm and average or CW output power, exceeding 1 W; d.1.c. Individual semiconductor “laser” 'bars' having any of the following: d.1.c.1. Wavelength of less than 1,400 nm and average or CW output power, exceeding 100 W; d.1.c.2. Wavelength equal to or greater than 1,400 nm and less than 1,900 nm and average or CW output power, exceeding 25 W; or d.1.c.3. Wavelength equal to or greater than 1,900 nm and average or CW output power, exceeding 10 W; d.1.d. Semiconductor “laser” `stacked arrays' (two dimensional arrays) having any of the following: d.1.d.1. Wav [Text truncated at 120,000 characters. The full text is on the page linked above.] --- Source: Frix Law Library, https://www.frixlaw.com/law-library/documents/fr%3A2023-03683. Public record. Not legal advice.